Optical input/output device, optical electronic system including the same, and method of manufacturing the same

• US 9,690,042 B2
• Filed: 10/24/2013
• Issued: 06/27/2017
• Est. Priority Date: 05/23/2013
• Status: Active Grant

• Current Assignee: Electronics and Telecommunications Research Institute
• Original Assignee: Electronics and Telecommunications Research Institute
• Inventors: Kim, Sang Gi, Kim, Gyungock, Kim, In Gyoo, Kim, Sang Hoon, Jang, Ki Seok, Park, Hyundai, Joo, Jiho, Kwon, Hyuk Je, Park, Jaegyu, Kim, Sun Ae, Oh, Jin Hyuk, Choi, Yongseok, Kwack, Myung Joon
• Primary Examiner(s): Anya, Igwe U
• Application Number:
  US14/062,454
• Publication Number:
  US 20140346532A1
• Time in Patent Office: 1,342 Days
• Field of Search: 257 84
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/13 Integrated optical circuits characterised by the manufacturing method
• CPC Class Codes: G02B 6/4206 Optical features G02B6/4207, G02B6/421 take precedence
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: H01L 21/762 Dielectric regions , e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 31/167 the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Abstract

Disclosed are an optical input/output device and an opto-electronic system including the same. The device includes a bulk silicon substrate, at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate, and at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate adjacent to the vertical-input light detection element. The vertical-output light source element includes a III-V compound semiconductor light source active layer combined with the bulk silicon substrate by a wafer bonding method.

Claims

1. A bulk-silicon photonic input/output device comprising:

a bulk silicon substrate;

at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate; and

at least one vertical-output light source element monolithically integrated on another portion of the bulk silicon substrate,

wherein the at least one vertical-input light detection element is comprised of an active layer grown directly on the bulk silicon substrate;

wherein the at least one vertical-input light detection element includes a bulk-germanium, germanium-based quantum dots, a germanium-based quantum wire array, a Ge_1-xSi_x/Ge_1-ySi_y superlattice (0≦

x,y≦

1), a bulk-silicon or a combined structure, directly-grown on the bulk silicon substrate, to thereby directly contact the bulk silicon substrate,

wherein the at least one vertical-output light source element includes a monolithic light output device structure, based on a wafer-bonded thin-film III-V compound semiconductor active layer directly wafer-bonded and monolithic-integrated on the bulk silicon substrate.

2. The bulk-silicon photonic input/output device of claim 1, wherein the at least one vertical-output light source element includes a surface emitting laser or a surface emitting light emitting diode (LED).

3. The bulk-silicon photonic input/output device of claim 1, further comprising:

a first passivation layer on the at least one vertical-output light source element and the at least one vertical-input light detection element.

4. The bulk-silicon photonic input/output device of claim 3, wherein the first passivation layer includes silicon oxide.

5. The bulk-silicon photonic input/output device of claim 3,

wherein the first passivation layer has holes exposing the at least one vertical-output light source element and the at least one vertical-input light detection element,

the optical input/output device, further comprising:

optical vias formed in the holes, respectively.

6. The bulk-silicon photonic input/output device of claim 5, wherein the optical vias include silicon nitride.

7. The bulk-silicon photonic input/output device of claim 6, further comprising horizontal optical waveguides provided on the first passivation layer and coupled to the optical vias.

8. The bulk-silicon photonic input/output device of claim 7, further comprising:

a passive optical circuit provided on the first passivation layer,

wherein the passive optical circuit includes optical multiplexer/demultiplexer (MUX/DEMUX), an optical switch, or a grating coupler; and

wherein the passive optical circuit is coupled to the horizontal optical waveguides.

9. The bulk-silicon photonic input/output device of claim 1, further comprising:

a complementary metal-oxide semiconductor (CMOS) interface circuitry electrically connected to the at least one vertical-input light detection element or the at least one vertical-output light source element,

wherein the CMOS interface circuitry is monolithically integrated on the bulk silicon substrate.

10. The bulk-silicon photonic input/output device of claim 9, wherein the CMOS interface circuitry includes a trans-impedance amplifier (TIA), a light source driver, a limiting amplifier (LA), a serialize/deserialize circuit, a PLL circuit, a clock-data-recovery (CDR) circuit, or a protocol integrated circuit.

11. The bulk-silicon photonic input/output device of claim 1, further comprising:

an optical multiplexer or an optical demultiplexer or an optical switch, or a grating coupler;

a second passivation layer that the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler is formed within; and

a third passivation layer on and above the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler so as to cover the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler.

12. A bulk-silicon photonic input/output device comprising:

a bulk silicon substrate;

at least one vertical-input light detection element monolithically integrated on a portion of the bulk silicon substrate;

a III-V compound semiconductor substrate mounted on another portion of the bulk silicon substrate by a die-bonding;

at least one vertical-output light source element on the III-V compound semiconductor substrate;

an optical multiplexer or an optical demultiplexer or an optical switch, or a grating coupler;

a second passivation layer that the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler is formed within; and

a third passivation layer on and above the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler so as to cover the optical multiplexer or the optical demultiplexer or the optical switch, or the grating coupler,

wherein the at least one vertical-input light detection element is comprised of an active layer grown directly on the bulk silicon substrate.