Power amplifier modules with bifet and harmonic termination and related systems, devices, and methods
First Claim
1. A power amplifier module comprising:
- a power amplifier die including a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a p-type field effect transistor, the heterojunction bipolar transistor including a collector, and the p-type field effect transistor including a semiconductor segment that includes substantially the same material as a layer of the collector of the heterojunction bipolar transistor, the semiconductor segment corresponding to a channel of the p-type field effect transistor;
a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal; and
a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the radio frequency signal.
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Accused Products
Abstract
One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.
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Citations
20 Claims
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1. A power amplifier module comprising:
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a power amplifier die including a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a p-type field effect transistor, the heterojunction bipolar transistor including a collector, and the p-type field effect transistor including a semiconductor segment that includes substantially the same material as a layer of the collector of the heterojunction bipolar transistor, the semiconductor segment corresponding to a channel of the p-type field effect transistor; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the radio frequency signal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A power amplifier module comprising:
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a power amplifier die including a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a field effect transistor, the heterojunction bipolar transistor including a collector, and the field effect transistor including a semiconductor segment that includes substantially the same material as a layer of the collector of the heterojunction bipolar transistor, the semiconductor segment corresponding to a channel of the field effect transistor; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the radio frequency signal, the load line and the harmonic termination circuit having separate electrical connections to the power amplifier die. - View Dependent Claims (12, 13)
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14. A power amplifier module comprising:
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a power amplifier die including a power amplifier configured to amplify a radio frequency signal, the power amplifier including a heterojunction bipolar transistor and a field effect transistor, the heterojunction bipolar transistor including a collector that includes a first collector layer and a second collector layer, the first collector layer having a different conductivity type than the second collector layer, and the field effect transistor including a semiconductor segment that includes substantially the same material as the first collector layer, the semiconductor segment corresponding to a channel of the field effect transistor; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the radio frequency signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the radio frequency signal, the load line and the harmonic termination circuit having separate electrical connections to the power amplifier die. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification