Semiconductor device

• US 9,693,482 B2
• Filed: 10/29/2013
• Issued: 06/27/2017
• Est. Priority Date: 11/27/2012
• Status: Active Grant

• Current Assignee: TDK Electronics AG (TDK Corporation)
• Original Assignee: Epcos AG (TDK Corporation)
• Inventors: Feichtinger, Thomas, Rinner, Franz
• Primary Examiner(s): Hoffberg, Robert J
• Application Number:
  US14/646,444
• Publication Number:
  US 20150271948A1
• Time in Patent Office: 1,337 Days
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/3736 Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/1304 : Transistor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 33/64 : Heat extraction or cooling elements
• CPC Class Codes: H01L 33/641 : characterized by the materials
• CPC Class Codes: H01L 33/642 : characterized by the shape
• CPC Class Codes: H05K 7/205 : Heat-dissipating body thermally connected to heat generating element via thermal paths through printed circuit board [PCB] details of PCBs relating to heat transfer H05K1/0201

Abstract

A semiconductor device includes a semiconductor component on a carrier body that includes a ceramic body and a thermistor sensor structure directly connected to the ceramic body. The thermistor sensor structure is integrated into the carrier body and includes a heat sink, on which the carrier body is mounted.

Claims

1. A semiconductor device comprising:

a semiconductor component;

a carrier body on which the semiconductor component is mounted, the carrier body comprising a ceramic body and thermistor sensor structures each directly connected to the ceramic body, the thermistor sensor structures being integrated into the carrier body; and

a heat sink, wherein the carrier body is mounted on the heat sink,

wherein the semiconductor device is configured to establish a heat dissipating path between the semiconductor component, the carrier body and the heat sink, wherein one of the thermistor sensor structures is arranged on a side of the carrier body facing the semiconductor component and another of the thermistor sensor structures is arranged on a side of the carrier body facing away from the semiconductor component.

2. The semiconductor device according to claim 1, wherein the ceramic body has an electrical resistivity of more than 50 000 ohm·

cm.

3. The semiconductor device according to claim 1, wherein the thermistor sensor structures have an electrical resistivity of less than 5000 ohm·

cm.

4. The semiconductor device according to claim 1, wherein the thermistor sensor structures comprise NTC thermistors.

5. The semiconductor device according to claim 1, wherein the heat sink comprises a metallic heat sink.

6. The semiconductor device according to claim 1, wherein the carrier body is mounted directly on the heat sink.

7. The semiconductor device according to claim 1, wherein the carrier body has a contact structure, the semiconductor component being mounted on the carrier body by way of the contact structure.

8. The semiconductor device according to claim 1, wherein the carrier body has a metal structure for redistribution wiring and for electrical connection of the semiconductor component.

9. The semiconductor device according to claim 1, wherein the carrier body has an insulator layer between the one thermistor sensor structure that faces the semiconductor component and the semiconductor component.

10. The semiconductor device according to claim 1, further comprising a plurality of carrier bodies and a plurality of semiconductor components, wherein the plurality of carrier bodies are mounted on the heat sink, and wherein each carrier body of the plurality of carrier bodies has a respective semiconductor component of the plurality of semiconductor components mounted thereon.

11. The semiconductor device according to claim 1, further comprising a discrete protective component disposed on the heat sink.

12. The semiconductor device according to claim 1, wherein the semiconductor component comprises a power semiconductor component.

13. The semiconductor device according to claim 1, wherein the semiconductor component comprises a component selected from the group consisting of a light-emitting diode, a graphics chip, an amplifier chip and a discrete power transistor.

14. The semiconductor device according to claim 1, wherein the ceramic body comprises aluminum oxide and/or aluminum nitride.

15. The semiconductor device according to claim 1, wherein the thermistor sensor structures comprise PTC thermistors.

16. A semiconductor device comprising:

a semiconductor component;

a carrier body on which the semiconductor component is mounted, the carrier body comprising a ceramic body and a thermistor sensor structure directly connected to the ceramic body, the thermistor sensor structure being integrated into the carrier body;

an insulating layer arranged between the thermistor sensor structure and the semiconductor component, the insulating layer being reflective; and

a heat sink, wherein the carrier body is mounted on the heat sink.

17. The semiconductor device according to claim 16, wherein the insulating layer is white.

18. The semiconductor device according to claim 16, wherein the insulating layer comprises aluminum oxide, titanium oxide, silicon oxide or a plastic material.

19. The semiconductor device according to claim 16, wherein the carrier body has thermal vias that project through the ceramic body and are in thermal contact with the thermistor sensor structure.