Data storage device and error correction method thereof

• US 9,697,076 B2
• Filed: 01/25/2016
• Issued: 07/04/2017
• Est. Priority Date: 05/31/2013
• Status: Active Grant

• Current Assignee: Silicon Motion Incorporated California (Silicon Motion)
• Original Assignee: Silicon Motion Incorporated California (Silicon Motion)
• Inventors: Chen, Chun-Yi
• Primary Examiner(s): Torres, Joseph D
• Application Number:
  US15/005,272
• Publication Number:
  US 20160139986A1
• Time in Patent Office: 526 Days
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence
• CPC Class Codes: G06F 11/1072 in multilevel memories
• CPC Class Codes: G06F 11/1402 Saving, restoring, recovering or retrying
• CPC Class Codes: G06F 11/141 for bus or memory accesses
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 2212/1032 Reliability improvement, data loss prevention, degraded operation etc
• CPC Class Codes: G06F 2212/7202 Allocation control and policies
• CPC Class Codes: G06F 2212/7206 Reconfiguration of flash memory system
• CPC Class Codes: G11C 11/5642 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 2211/5641 Multilevel memory having cells with different number of storage levels
• CPC Class Codes: G11C 29/52 Protection of memory contents; Detection of errors in memory contents

Abstract

A data reading method, applied to a data storage device that includes a flash memory capable of operating in a SLC mode and a multi-level cell mode. The data reading method includes reading a page corresponding to a first word line of the flash memory in the SLC mode according to a read command of a host to obtain a first data segment, writing a predetermined data into a most-significant-bit page corresponding to the first word line in the multi-level cell mode when the first data segment has an error, and reading the page corresponding to the first word line in the SLC mode again to obtain a second data segment.

Claims

1. A data reading method, applied to a data storage device, wherein the data storage device comprises a flash memory capable of operating in a SLC mode and a multi-level cell mode, the data reading method comprising:

reading a page corresponding to a first word line of the flash memory in the SLC mode according to a read command of a host to obtain a first data segment;

writing a predetermined data into a most-significant-bit page corresponding to the first word line in the multi-level cell mode when the first data segment has an error;

reading the page corresponding to the first word line in the SLC mode again to obtain a second data segment.

2. The data reading method as claimed in claim 1, further comprising transmitting the second data segment to the host.

3. The data reading method as claimed in claim 1, further comprising:

marking the page corresponding to the first word line as a bad page when the second data segment has an error.

4. The data reading method as claimed in claim 1, further comprising:

marking a first block corresponding to the first word line as a bad block when the second data segment has an error.

5. The data reading method as claimed in claim 1, wherein the predetermined data is 0xFF.