Semiconductor device and semiconductor module
First Claim
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1. A semiconductor device comprising:
- an insulating layer;
a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in a vertical direction;
a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in plan view and is connected with potential lower than the high voltage coil, the low potential portion includinga low voltage pad which is exposed to a surface of the insulating layer, andlow voltage wiring which is connected between the low voltage coil and the low voltage pad, the low voltage wiring including a lead-out wiring formed in a linear shape, the lead-out wiring being led out from the low voltage coil at a position lower than a position of the low voltage coil in the vertical direction to a region under the low voltage pad; and
an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member, the electrically floated metal member being arranged away from the high voltage region in a horizontal direction and between the high voltage coil and the low voltage pad, and crossing the lead-out wiring in plan view.
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Abstract
The semiconductor device of the present invention includes an insulating layer, a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in the vertical direction, a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in planar view and is connected with potential lower than the high voltage coil, and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an insulating layer; a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in a vertical direction; a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in plan view and is connected with potential lower than the high voltage coil, the low potential portion including a low voltage pad which is exposed to a surface of the insulating layer, and low voltage wiring which is connected between the low voltage coil and the low voltage pad, the low voltage wiring including a lead-out wiring formed in a linear shape, the lead-out wiring being led out from the low voltage coil at a position lower than a position of the low voltage coil in the vertical direction to a region under the low voltage pad; and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member, the electrically floated metal member being arranged away from the high voltage region in a horizontal direction and between the high voltage coil and the low voltage pad, and crossing the lead-out wiring in plan view. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor module comprising:
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a semiconductor device including; an insulating layer; a high voltage coil and a low voltage coil which are disposed in the insulating layer at an interval in a vertical direction; a low potential portion which is provided in a low voltage region disposed around a high voltage region for the high voltage coil in plan view and is connected with potential lower than the high voltage coil, the low potential portion including a low voltage pad which is exposed to a surface of the insulating layer, and low voltage wiring which is connected between the low voltage coil and the low voltage pad, the low voltage wiring including a lead-out wiring formed in a linear shape, the lead-out wiring being led out from the low voltage coil at a position lower than a position of the low voltage coil in the vertical direction to a region under the low voltage pad; and an electric field shield portion which is disposed between the high voltage coil and the low voltage region and includes an electrically floated metal member, the electrically floated metal member being arranged away from the high voltage region in a horizontal direction and between the high voltage coil and the low voltage pad, and crossing the lead-out wiring in plan view; a low voltage element which is electrically connected with the low voltage coil of the semiconductor device; a high voltage element which is electrically connected with the high voltage coil of the semiconductor device; and a resin package arranged to collectively seal the semiconductor device, the low voltage element and the high voltage element.
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20. A semiconductor device, comprising:
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an insulating layer including a first portion and a second portion that are disposed at an interval in a vertical direction, the insulating layer including first and second regions in a horizontal direction, the second region including a portion surrounding the first region in plan view, the second region including a low potential area, the low potential area including a low voltage pad which is exposed to a surface of the insulating layer, and low voltage wiring which is connected between the low voltage coil and the low voltage pad, the low voltage wiring including a lead-out wiring formed in a linear shape, the lead-out wiring being led out from the low voltage coil at a position lower than a position of the low voltage coil in the vertical direction to a region under the low voltage pad; a high voltage coil disposed in the first region and in the first portion of the insulating layer; a low voltage coil disposed in the first region and in the second portion of the insulating layer; an element provided in the low potential area and being connected to a potential lower than a potential supplied to the high voltage coil; and an electric field shield disposed in the second region of the insulating layer and including an electrically floating metal member, the electrically floated metal member being arranged away from the high voltage region in a horizontal direction and between the high voltage coil and the low voltage pad, and crossing the lead-out wiring in plain view.
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Specification