RF impedance matching network
First Claim
1. A radio frequency (RF) impedance matching network comprising:
- an RF input configured to receive an RF signal from an RF source;
an RF output configured to operably couple to a plasma chamber;
at least one electronically variable capacitor (EVC) having a variable capacitance;
a control circuit configured to;
instruct the at least one EVC to alter the variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and
upon the achievement of the preliminary match state, instruct the RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output;
wherein the second reflection parameter value is less than the first reflection parameter value; and
wherein, when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, the control circuit again instructs the alteration of the variable capacitance and the variable RF source frequency.
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Accused Products
Abstract
An RF matching network includes a control circuit configured to instruct at least one EVC to alter its variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and upon the achievement of the preliminary match state, instruct an RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output; wherein the second reflection parameter value is less than the first reflection parameter value.
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Citations
20 Claims
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1. A radio frequency (RF) impedance matching network comprising:
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an RF input configured to receive an RF signal from an RF source; an RF output configured to operably couple to a plasma chamber; at least one electronically variable capacitor (EVC) having a variable capacitance; a control circuit configured to; instruct the at least one EVC to alter the variable capacitance, the alteration of the variable capacitance causing the matching network to achieve a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; and upon the achievement of the preliminary match state, instruct the RF source to alter a variable RF source frequency, the alteration of the variable RF source frequency causing achievement of a final match state, the final match state having an associated second reflection parameter value at the RF source output; wherein the second reflection parameter value is less than the first reflection parameter value; and wherein, when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, the control circuit again instructs the alteration of the variable capacitance and the variable RF source frequency. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method of impedance matching comprising:
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operably coupling an RF source to an impedance matching network; operably coupling the matching network to a plasma chamber; altering a variable capacitance of at least one electronically variable capacitor (EVC) of the matching network, the alteration of the variable capacitance causing achievement of a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; upon the achievement of the preliminary match state, altering a variable RF source frequency of the RF source, the alteration of the variable RF source frequency causing a final match state, the final match state having an associated second reflection parameter value at the RF source output, wherein the second reflection parameter value is less than the first reflection parameter value; and when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, again altering the variable capacitance and the variable RF source frequency. - View Dependent Claims (19)
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20. A method of manufacturing a semiconductor comprising:
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placing a substrate in a plasma chamber configured to deposit a material layer onto the substrate or etch a material layer from the substrate; and energizing plasma within the plasma chamber by coupling RF power from an RF source into the plasma chamber to perform a deposition or etching, and while energizing the plasma; operably coupling the RF source to an impedance matching network; operably coupling the matching network to the plasma chamber; altering a variable capacitance of at least one electronically variable capacitor (EVC) of the matching network, the alteration of the variable capacitance causing achievement of a preliminary match state, the preliminary match state having an associated first reflection parameter value at an RF source output; upon the achievement of the preliminary match state, altering a variable RF source frequency of the RF source, the alteration of the variable RF source frequency causing a final match state, the final match state having an associated second reflection parameter value at the RF source output, wherein the second reflection parameter value is less than the first reflection parameter value; and when a subsequent reflection parameter value at the RF source output exceeds a predetermined value, again altering the variable capacitance and the variable RF source frequency.
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Specification