Heterogeneous annealing method and device

• US 9,698,126 B2
• Filed: 10/09/2015
• Issued: 07/04/2017
• Est. Priority Date: 08/30/2012
• Status: Active Grant

• Current Assignee: Invensas Bonding Technologies, Inc. (Adeia Inc.)
• Original Assignee: Ziptronix Incorporated (Adeia Inc.)
• Inventors: Enquist, Paul M., Fountain, Gaius Gillman
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): Fortich, Rodolfo D
• Application Number:
  US14/879,800
• Publication Number:
  US 20160099233A1
• Time in Patent Office: 634 Days
• Field of Search: 257777, 257773, 257741, 257782, 257686
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2224/29147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/29155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/83053 Bonding environment
• CPC Class Codes: H01L 2224/83201 Compression bonding
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/49866 characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 28/26 with an active material comprising an organic conducting material, e.g. conducting polymers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

Claims

1. A method of integrating a first element having a first contact structure with a second element having a second contact structure, the method comprising:

non-adhesively bonding a front side of a first element with a first metal bonding structure directly to a front side of a second element with a second metal bonding structure;

thinning a back side of said first element;

attaching a third element to the thinned back side of the first element after the thinning;

heating the first, second, and third elements;

forming electrical connections between said first and second metal bonding structures; and

removing the third element.

2. The method of claim 1, further comprising removing the third element after the heating.

3. The method of claim 1, wherein the bonding comprises applying pressure using a clamp.

4. The method of claim 3, further comprising placing the first and second elements in a flexible container.

5. The method of claim 4, further comprising evacuating the flexible container.

6. The method of claim 4, further comprising applying pressure to the flexible container.

7. The method of claim 1, wherein the first and second metal bonding structures comprise nickel.

8. The method of claim 1, wherein the second and third elements have substantially the same coefficient of thermal expansion (CTE).

9. The method of claim 8, wherein the first element and the second element are made of different semiconductor materials.