Methods of forming 3-D circuits with integrated passive devices
First Claim
1. A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:
- one or more active devices; and
one or more passive devices electrically coupled to the one or more active devices;
wherein the structure comprises;
a first semiconductor substrate comprising at least part of the one or more active devices;
a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate; and
a third semiconductor substrate located between the first and second semiconductor substrates;
wherein the circuitry further comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices;
wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies; and
wherein the second semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies.
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Accused Products
Abstract
Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates coupled by through-substrates-vias (TSVs). An active device (AD) substrate has contacts on its upper portion. An isolator substrate is bonded to the AD substrate so the TSVs in the isolator substrate are coupled to the contacts on the AD substrate. An IPD substrate is bonded to the isolator substrate so that TVs therein are coupled to an interconnect zone on the isolator substrate and/or TSVs therein. The IPDs of the IPD substrate are coupled by TSVs in the IPD and isolator substrates to devices in the AD substrate. The isolator substrate provides superior IPD to AD cross-talk attenuation while permitting each substrate to have small high aspect ratio TSVs, thus facilitating high circuit packing density and efficient manufacturing.
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Citations
24 Claims
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1. A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:
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one or more active devices; and one or more passive devices electrically coupled to the one or more active devices; wherein the structure comprises; a first semiconductor substrate comprising at least part of the one or more active devices; a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate; and a third semiconductor substrate located between the first and second semiconductor substrates; wherein the circuitry further comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices; wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies; and wherein the second semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method comprising operating, at one or more frequencies which are at least as high as a radio frequency, a circuitry comprising:
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one or more active devices; and one or more passive devices electrically coupled to the one or more active devices; wherein at least part of the one or more active devices is located in a first semiconductor substrate; at least part of the one or more passive devices is located over a second semiconductor substrate overlying the first semiconductor substrate; and a third semiconductor substrate is located between the first and second semiconductor substrates; wherein the circuitry comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices; wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies; and wherein the second semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification