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Methods of forming 3-D circuits with integrated passive devices

  • US 9,698,131 B2
  • Filed: 12/21/2015
  • Issued: 07/04/2017
  • Est. Priority Date: 11/25/2008
  • Status: Active Grant
First Claim
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1. A structure comprising circuitry for operation at one or more frequencies at least as high as a radio frequency, the circuitry comprising:

  • one or more active devices; and

    one or more passive devices electrically coupled to the one or more active devices;

    wherein the structure comprises;

    a first semiconductor substrate comprising at least part of the one or more active devices;

    a second semiconductor substrate overlying the first semiconductor substrate and supporting at least part of the one or more passive devices located over the second semiconductor substrate; and

    a third semiconductor substrate located between the first and second semiconductor substrates;

    wherein the circuitry further comprises one or more conductive paths passing through the second and third semiconductor substrates and electrically coupling the one or more passive devices to the one or more active devices;

    wherein the third semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies; and

    wherein the second semiconductor substrate is a semiconductor material reducing electromagnetic coupling between the one or more passive devices and the one or more active devices at least at one of the one or more frequencies.

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