Display and electronic unit

• US 9,698,164 B2
• Filed: 12/20/2012
• Issued: 07/04/2017
• Est. Priority Date: 12/20/2011
• Status: Active Grant

• Current Assignee: JDI Design and Development GK
• Original Assignee: JOLED Inc.
• Inventors: Arai, Toshiaki, Morosawa, Narihiro
• Primary Examiner(s): PIZARRO CRESPO, MARCOS D
• Application Number:
  US13/722,339
• Publication Number:
  US 20130153893A1
• Time in Patent Office: 1,657 Days
• Field of Search: 257 43, 257 49, 257E27131
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/127 with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors

Abstract

A display device includes a display element, a transistor configured to drive the display element, the transistor including a channel region, and a retention capacitor. An oxide semiconductor film is provided in areas across the transistor and the retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and a second region having a lower resistance than that of the first region. The second region is formed in the areas of the transistor and retention capacitor other than in the channel region.

Claims

1. An electronic apparatus comprising:

a display device including

a display element,

a transistor configured to drive the display element, the transistor including a channel region, and

a retention capacitor,

a high-resistance film; and

an inorganic insulating film,

wherein an oxide semiconductor film is provided in areas across and connecting the transistor and retention capacitor, the oxide semiconductor film including a first region formed in the channel region of the transistor, and in the areas of the transistor and retention capacitor other than in the channel region, and a second region having a lower resistance than that of the first region, the second region provided in the area of the capacitor,

wherein the high-resistance film and the inorganic insulating film cover the oxide semiconductor film in the first region and the second region and are provided in between an upper electrode and a lower electrode of a pair of electrodes of the retention capacitor, and

wherein the upper electrode of the pair of electrodes is covered by an organic film, and a source/drain electrode of the transistor is formed on the organic film.

2. The electronic apparatus according to claim 1, wherein the oxide semiconductor film includes at least one selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn).

3. The electronic apparatus according to claim 1, wherein the second region further includes a metal that has reacted and diffused into an upper surface of the oxide semiconductor film.

4. The electronic apparatus according to claim 1, wherein the second region further includes regions corresponding to source and drain regions in the transistor.

5. A display device comprising:

a display element;

a transistor configured to drive the display element, the transistor including a channel region; and

a retention capacitor;

a high-resistance film; and

an inorganic insulating film,

wherein an oxide semiconductor film is provided in areas across and connecting the transistor and the retention capacitor, the oxide semiconductor film including

a first region formed in the channel region of the transistor, and in the areas of the transistor and retention capacitor other than in the channel region, and

a second region having a lower resistance than that of the first region, the second region provided in the area of the capacitor,

wherein the high-resistance film and the inorganic insulating film cover the oxide semiconductor film in the first region and the second region and are provided in between an upper electrode and a lower electrode of a pair of electrodes of the retention capacitor, and

wherein the upper electrode of the pair of electrodes is covered by an organic film, and a source/drain electrode of the transistor is formed on the organic film.

6. The display device according to claim 5, further comprising a gate insulating film formed on the oxide semiconductor film in the first region.

7. The display device according to claim 5, wherein the oxide semiconductor film is formed of an oxide semiconductor containing one or more of indium (In), gallium (Ga), zinc (Zn), silicon (Si), and tin (Sn).

8. The display device according to claim 5, wherein the oxide semiconductor film includes at least one of:

(a) an amorphous semiconductor selected from the group consisting of indium tin zinc oxide (ITZO) and indium gallium zinc oxide (IGZO or InGaZnO); and

(b) a crystalline oxide semiconductor selected from the group consisting of zinc oxide (ZnO), indium zinc oxide (IZO), indium gallium oxide (IGO), ITO, and indium oxide (InO).

9. The display device according to claim 5, wherein the first and second regions of the oxide semiconductor film are formed of the same base materials, and the second region further includes a metal that has reacted and diffused into an upper surface of the oxide semiconductor film.

10. The display device according to claim 5, wherein the second region includes regions corresponding to an electrode of the retention capacitor, and source and drain regions in the transistor.

11. The display device according to claim 5, further comprising an interlayer insulating film, wherein the interlayer insulating film includes an inorganic insulating film formed on the high-resistance film, and an organic insulating film formed on the inorganic insulating film.

12. The display device according to claim 11, wherein a concentration of hydrogen contained in the inorganic insulating film is preferably equal to or lower than about 1×

10²⁰ cm<sup>−

3</sup>.