Partial buried channel transfer device for image sensors

• US 9,698,185 B2
• Filed: 10/13/2011
• Issued: 07/04/2017
• Est. Priority Date: 10/13/2011
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Inventors: Bikumandla, Manoj, Zheng, Wei, Venezia, Vincent, Ku, Keh-Chiang, Rhodes, Howard E., Chen, Gang, Mao, Duli, Qian, Yin, Tai, Hsin-Chih, Hu, Sing-Chung, Xiong, Zhibin
• Primary Examiner(s): Gupta, Raj R
• Application Number:
  US13/273,026
• Publication Number:
  US 20130092982A1
• Time in Patent Office: 2,091 Days
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

Claims

1. An image sensor pixel, comprising:

a photosensitive element disposed in a substrate layer for accumulating an image charge in response to light;

a floating diffusion (“

FD”

) region disposed in the substrate layer to receive the image charge from the photosensitive element; and

a transfer device disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region, the transfer device including;

a buried channel device including a buried channel gate disposed over a buried channel dopant region; and

a surface channel device in series with the buried channel device, the surface channel device including a surface channel gate disposed over a surface channel region, wherein the surface channel gate has the opposite doping polarity of the buried channel gate.

2. The image sensor pixel of claim 1, further comprising a common gate electrode and a common gate insulating layer, wherein the buried channel gate and the surface channel gate are disposed between the common gate electrode and the common gate insulating layer, and wherein the common gate electrode delivers a gate voltage common to the buried channel gate and the surface channel gate.

3. The image sensor pixel of claim 1, wherein the buried channel dopant region is adjacent to the photosensitive element and to the surface channel region.

4. The image sensor pixel of claim 3, wherein a ratio of a length of the buried channel dopant region and a length of the surface channel region is tuned to allow electrons from the photosensitive element to punch through to the FD region when the photosensitive element approaches full capacity and the transfer device is off.

5. The image sensor pixel of claim 3, wherein the buried channel dopant region is adjoining the photosensitive element, the buried channel dopant region is aligned under the buried channel gate, and an edge of the buried channel dopant region closest to the photosensitive element is flush with an edge of the common gate electrode.

6. The image sensor pixel of claim 1, wherein the buried channel gate has the opposite doping polarity of the photosensitive element and the FD region.

7. The image sensor pixel of claim 6, wherein the photosensitive element, the FD region, the buried channel dopant region, and the surface channel gate are N type doped, and wherein the buried channel gate is P type doped.

8. The image sensor pixel of claim 7, wherein the surface channel region is P type doped.

9. The image sensor pixel of claim 1, wherein the surface channel device has a lower threshold voltage than the buried channel device.

10. The image sensor pixel of claim 1, wherein a threshold voltage of the transfer device is between 0.5V and 0.9V.

11. An imaging system comprising:

an array of imaging pixels wherein each imaging pixel includes;

readout circuitry coupled to the array of imaging pixels to readout image data from each of the image sensor pixels;

a photosensitive element disposed in a substrate layer for accumulating an image charge in response to light;

a floating diffusion (“

FD”

) region disposed in the substrate layer to receive the image charge from the photosensitive element; and

a transfer device disposed between the photosensitive element and the FD region to selectively transfer the image charge from the photosensitive element to the FD region, the transfer device including;

a buried channel device including a buried channel gate disposed over a buried channel dopant region; and

a surface channel device adjacent to the buried channel device, the surface channel device including a surface channel gate disposed over a surface channel region, wherein the surface channel gate has the opposite dopant polarity of the buried channel gate.

12. The imaging system of claim 11, wherein the buried channel gate has the opposite doping polarity of the photosensitive element and the FD region.

13. The imaging system of claim 12, wherein the photosensitive element, the FD region, the buried channel dopant region, and the surface channel gate are N type doped, and wherein the buried channel gate is P type doped.

14. The imaging system of claim 11, wherein the buried channel device has a higher threshold voltage than the surface channel device.

15. The imaging system of claim 11, wherein the buried channel dopant region is adjacent to and adjoining the photosensitive element and a ratio of a length of the buried channel gate and the surface channel gate is tuned to optimize blooming and lag characteristics of the imaging pixel.

16. The image sensor pixel of claim 11, further comprising:

a common gate electrode; and

a common gate insulating layer, wherein the buried channel gate and the surface channel gate are disposed between the common gate electrode and the common gate insulating layer, and wherein the common gate electrode delivers a gate voltage common to the buried channel gate and the surface channel gate.