Transistor device with field-electrode
First Claim
1. A transistor device, comprising:
- a plurality of field structures that define a plurality of semiconductor mesa regions in a semiconductor body, and each of which comprises a field electrode and a field electrode dielectric;
a plurality of gate structures in each semiconductor mesa region, wherein each gate structure comprises a gate electrode and a gate dielectric, and is arranged in a trench of the semiconductor mesa region; and
a plurality of body regions, a plurality of source regions, and a drift region,wherein each body region adjoins the gate dielectric of at least one of the plurality of gate structures, and is located between one of the plurality of source regions and the drift region,wherein the plurality of body regions comprises a first group of body regions and a second group of body regions,wherein each body region of the first group is located between two neighboring gate structures of the plurality of gate structures,wherein each body region of the second group is located between one of the plurality of gate structures and one of the plurality of field structures, andwherein a width of each of the body regions of the second group is less than the width of one body region of the first group.
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Accused Products
Abstract
Disclosed is a transistor device. The transistor device includes a plurality of field structures which define a plurality of semiconductor mesa regions in a semiconductor body, and each of which comprises a field electrode and a field electrode dielectric; a plurality of gate structures in each semiconductor mesa region, wherein each gate structure comprises a gate electrode and a gate dielectric, and is arranged in a trench of the semiconductor mesa region; a plurality of body regions, a plurality of source regions, and a drift region. Each body region adjoins the gate dielectric of at least one of the plurality of gate structures, and is located between one of the plurality of source regions and the drift region.
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Citations
20 Claims
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1. A transistor device, comprising:
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a plurality of field structures that define a plurality of semiconductor mesa regions in a semiconductor body, and each of which comprises a field electrode and a field electrode dielectric; a plurality of gate structures in each semiconductor mesa region, wherein each gate structure comprises a gate electrode and a gate dielectric, and is arranged in a trench of the semiconductor mesa region; and a plurality of body regions, a plurality of source regions, and a drift region, wherein each body region adjoins the gate dielectric of at least one of the plurality of gate structures, and is located between one of the plurality of source regions and the drift region, wherein the plurality of body regions comprises a first group of body regions and a second group of body regions, wherein each body region of the first group is located between two neighboring gate structures of the plurality of gate structures, wherein each body region of the second group is located between one of the plurality of gate structures and one of the plurality of field structures, and wherein a width of each of the body regions of the second group is less than the width of one body region of the first group. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A transistor device, comprising:
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a plurality of field structures that define a plurality of semiconductor mesa regions in a semiconductor body, and each of which comprises a field electrode and a field electrode dielectric; a plurality of gate structures in each semiconductor mesa region, wherein each gate structure comprises a gate electrode and a gate dielectric, and is arranged in a trench of the semiconductor mesa region; and a plurality of body regions, a plurality of source regions, and a drift region, wherein each body region adjoins the gate dielectric of at least one of the plurality of gate structures, and is located between one of the plurality of source regions and the drift region; wherein the plurality of body regions comprises a first group of body regions and a second group of body regions, wherein each body region of the first group is located between two neighboring gate structures of the plurality of gate structures, wherein each body region of the second group is located between one of the plurality of gate structures and one of the plurality of field structures, and wherein a ratio between a width of each of the body regions of the second group and a length of one body region in a current flow direction is less than 0.5. - View Dependent Claims (18, 19, 20)
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Specification