Light-emitting device including reflective layer

• US 9,698,325 B2
• Filed: 10/29/2015
• Issued: 07/04/2017
• Est. Priority Date: 08/18/2008
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Epistar Corporation
• Inventors: Chen, Ding-Yuan, Yu, Chia-Lin, Yu, Chen-Hua, Chiou, Wen-Chih
• Primary Examiner(s): HENRY, CALEB E
• Application Number:
  US14/927,131
• Publication Number:
  US 20160064632A1
• Time in Patent Office: 614 Days
• Field of Search: 257 88
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device comprises a substrate; a plurality of light-emitting diodes formed on the substrate, wherein each of the plurality of light-emitting diodes comprises a first conductivity type layer, an active layer on the first conductivity type layer, and a second conductivity type layer on the active layer; a reflective layer surrounding a sidewall of each of the plurality of light-emitting diodes; and a top electrode formed on the reflective layer and the plurality of light-emitting diodes.

Claims

1. A light-emitting device, comprising:

a substrate;

a first light-emitting diode formed on the substrate;

a second light-emitting diode formed on the substrate and separated from the first light-emitting diode by a space, wherein the space is a surface of the substrate;

a spacer layer formed on the space and surrounding multiple sidewalls of the first light-emitting diode and the second light-emitting diode;

a reflective layer formed on the spacer layer and surrounding the multiple sidewalls of the first light-emitting diode and the second light-emitting diode; and

a top electrode formed on the first light-emitting diode and the second light-emitting diode,

wherein the top electrode comprises transparent conductive material.

2. The light-emitting device according to claim 1, wherein the top electrode is formed on the spacer layer.

3. A light-emitting device according to claim 1, wherein each of the first light-emitting diode and the second light-emitting diode comprises a first conductivity type layer, an active layer on the first conductivity type layer, a second conductivity type layer on the active layer, and the reflective layer comprises a top surface lower than the active layer.

4. A light-emitting device according to claim 1, wherein the spacer layer comprises an inclined sidewall.

5. A light-emitting device according to claim 1, wherein the reflective layer comprises silver (Ag) or aluminum (Al).

6. The light-emitting device according to claim 1, wherein the substrate comprises a sapphire substrate, a semiconductor substrate, a SiC substrate, or a silicon substrate.

7. The light-emitting device according to claim 1, wherein the spacer layer comprises nitride, oxide, or SiO_xN_y.

8. The light-emitting device according to claim 1, wherein the reflective layer is separated from the first light-emitting diode and the second light-emitting diode by the spacer layer.

9. The light-emitting device according to claim 1, wherein the reflective layer is formed between the first light-emitting diode and the second light-emitting diode.

10. The light-emitting device according to claim 1, wherein each of the first light-emitting diode and the second light-emitting diode comprises a rectangular shape from a top view of the light-emitting device.

11. The light-emitting device according to claim 1, wherein the first light-emitting diode and the second light-emitting diode are separated from each other with a distance between 10 nm and 5000 nm.

12. A light-emitting device, comprising:

a substrate;

a first light-emitting diode formed on the substrate;

a second light-emitting diode formed on the substrate and separated from the first light-emitting diode by a space, wherein the space is a surface of the substrate;

a spacer layer formed on the space and surrounding multiple sidewalls of the first light-emitting diode and the second light-emitting diode;

a reflective layer formed on the space;

a top electrode formed on the first light-emitting diode and the second light-emitting diode, wherein the top electrode comprises transparent conductive material; and

a fill material formed on the first light-emitting diode and the second light-emitting diode, wherein one or multiple portions of the fill material is removed, and the top electrode is electrically connected to the first light-emitting diode and the second light-emitting diode through the one or multiple portions.

13. The light-emitting device according to claim 12, wherein each of the first light-emitting diode and the second light-emitting diode comprises a first conductivity type layer, an active layer on the first conductivity type layer, a second conductivity type layer on the active layer, and the reflective layer comprises a top surface lower than the active layer.

14. The light-emitting device according to claim 12, wherein the top electrode is formed on the spacer layer.

15. The light-emitting device according to claim 12, wherein the spacer layer comprises an inclined sidewall.

16. The light-emitting device according to claim 12, wherein the reflective layer comprises silver (Ag) or aluminum (Al).

17. The light-emitting device according to claim 12, wherein the substrate comprises a sapphire substrate, a semiconductor substrate, a SiC substrate, or a silicon substrate.

18. The light-emitting device according to claim 12, wherein the spacer layer comprises nitride, oxide, or SiO_xN_y.

19. The light-emitting device according to claim 12, wherein the reflective layer is separated from the first light-emitting diode and the second light-emitting diode by the spacer layer.

20. The light-emitting device according to claim 12, wherein each of the first light-emitting diode and the second light-emitting diode comprises a rectangular shape from a top view of the light-emitting device.

21. The light-emitting device according to claim 12, wherein the first light-emitting diode and the second light-emitting diode are separated from each other with a distance between 10 nm and 5000 nm.