In-plane piezoresistive detection sensor
First Claim
1. An in-plane MEMS or NEMS detection device for measuring displacements directed along a direction, comprising:
- a seismic mass suspended with respect to a substrate, the seismic mass being pivotable about an axis perpendicular to the plane of the substrate;
at least one piezoresistive strain gauge suspended between the seismic mass and the substrate, and mechanically and electrically directly connected to the seismic mass and mechanically and electrically connected to an embedding pad anchored to the substrate,the seismic mass being in turn suspended with respect to the substrate by at least one beam, the at least one beam being connected to the substrate at an area distinct from that by which the gauge is connected to the substrate,wherein the piezoresistive gauge is thinner than the seismic mass, and wherein the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane being orthogonal to the direction of the displacements to be measured, andwherein the at least one beam has a thickness higher than a thickness of the piezoresistive gauge.
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Abstract
An in-plane MEMS or NEMS detection device for measuring displacements directed along a direction including a seismic mass suspended with respect to a substrate, the seismic mass being pivotable about an axis perpendicular to the plane of the substrate, at least one piezoresistive strain gauge mechanically connected to the seismic mass and the substrate, wherein the piezoresistive gauge has a thickness lower than that of the seismic mass, and wherein the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane is orthogonal to the direction of the displacements to be measured.
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Citations
20 Claims
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1. An in-plane MEMS or NEMS detection device for measuring displacements directed along a direction, comprising:
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a seismic mass suspended with respect to a substrate, the seismic mass being pivotable about an axis perpendicular to the plane of the substrate; at least one piezoresistive strain gauge suspended between the seismic mass and the substrate, and mechanically and electrically directly connected to the seismic mass and mechanically and electrically connected to an embedding pad anchored to the substrate, the seismic mass being in turn suspended with respect to the substrate by at least one beam, the at least one beam being connected to the substrate at an area distinct from that by which the gauge is connected to the substrate, wherein the piezoresistive gauge is thinner than the seismic mass, and wherein the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane being orthogonal to the direction of the displacements to be measured, and wherein the at least one beam has a thickness higher than a thickness of the piezoresistive gauge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for making an in-plane MEMS or NEMS detection device, the method comprising:
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forming a first thin area, having a first thickness forming at least one piezoresistive gauge; and forming a second thick area, having a second thickness higher than the first thickness forming at least one seismic mass, the seismic mass being suspended with respect to a substrate and being pivotable about an axis perpendicular to the plane of the substrate, wherein the forming of the at least one piezoresistive strain gauge includes suspending the at least one piezoresistive gauge between the seismic mass and the substrate, the at least one piezoresistive strain gauge being mechanically and electrically directly connected to the seismic mass and mechanically and electrically connected to an embedding pad anchored to the substrate, the forming of the seismic mass includes suspending the seismic mass with respect to the substrate by at least one beam, the at least one beam being connected to the substrate at an area distinct from that by which the gauge is connected to the substrate, and the at least one beam having a thickness higher than that of the piezoresistive gauge, and the piezoresistive gauge is thinner than the seismic mass, and the axis of the piezoresistive strain gauge is orthogonal to the plane containing the pivot axis and the center of gravity of the seismic mass and the plane being orthogonal to the direction of the displacements to be measured. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification