Display device and manufacturing method thereof

• US 9,703,140 B2
• Filed: 08/06/2015
• Issued: 07/11/2017
• Est. Priority Date: 12/28/2005
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): Nguyen, Dung
• Application Number:
  US14/819,595
• Publication Number:
  US 20160033820A1
• Time in Patent Office: 705 Days
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02F 1/1333 Constructional arrangements; Manufacturing methodsG02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133371 Cells with varying thickness of the liquid crystal layer
• CPC Class Codes: G02F 1/133555 Transflectors
• CPC Class Codes: G02F 1/136231 for reducing the number of lithographic steps
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials

Abstract

In a semi-transmission liquid crystal display device, two resist masks are required to form a reflective electrode and a transparent electrode; therefore, cost is high. A transparent electrode and a reflective electrode which function as a pixel electrode are stacked. A resist pattern which includes a region having a thick film thickness and a region having a thinner film thickness than the aforementioned region is formed over the reflective electrode by using a light exposure mask which includes a semi-transmission portion. The reflective electrode and the transparent electrode are formed by using the resist pattern. Therefore, the reflective electrode and the transparent electrode can be formed by using one resist mask.

Claims

1. A display device comprising:

a transistor over a first substrate, the transistor comprising a channel formation region in a semiconductor film;

a first insulating film over the semiconductor film;

a gate wiring over the first insulating film;

a first conductive film over the first substrate;

a second insulating film over the gate wiring and the first conductive film;

a source and drain electrode layers over the second insulating film;

a third insulating film over the source and drain electrode layers;

a second conductive film over the third insulating film, the second conductive film being capable of transmitting light;

a third conductive film over the second conductive film, the third conductive film being capable of reflecting light;

a fourth conductive film over the second conductive film;

a liquid crystal layer over the third conductive film; and

a second substrate over the liquid crystal layer,

wherein the second conductive film comprises a first region which is overlapped with the third conductive film and a second region which is not overlapped with the third conductive film,

wherein the first region includes a region which overlaps the first conductive film with the second insulating film and the third insulating film interposed therebetween,

wherein the second region has a larger area than the first region,

wherein the third conductive film overlaps the first conductive film along a long axis direction thereof,

wherein the semiconductor film comprises a third region whose long axis is provided along a long axis direction of the gate wiring and a fourth region whose long axis is provided along a long axis direction of one of the source and drain electrode layers,

wherein the third region includes a fifth region which is overlapped with the gate wiring,

wherein the fourth region includes a region which is overlapped with the first region,

wherein the fifth region is not overlapped either with the second conductive film or the third conductive film, and

wherein the gate wiring and the first conductive film are provided on a same surface.

2. The display device according to claim 1, wherein the semiconductor film is an oxide semiconductor film which comprises In, Zn and a metal other than In and Zn.

3. The display device according to claim 1, wherein a top surface of the third conductive film is in contact with the liquid crystal layer.

4. The display device according to claim 1, wherein a bottom surface of the third conductive film is in contact with a top surface of the second conductive film.

5. The display device according to claim 1, wherein the first conductive film serves as one electrode of a capacitor.

6. The display device according to claim 1, wherein the third conductive film serves as part of a pixel electrode.

7. An electronic device comprising a display portion into which the display device according to claim 1 is incorporated.

8. The display device according to claim 1,

wherein the liquid crystal layer is located between the second conductive film and the fourth conductive film, and

wherein the fourth conductive film serves as an opposite electrode.

9. A display device comprising:

a transistor over a first substrate, the transistor comprising a channel formation region in a semiconductor film;

a first insulating film over the semiconductor film;

a gate wiring over the first insulating film;

a first conductive film over the first substrate;

a second insulating film over the gate wiring and the first conductive film;

a source and drain electrode layers over the second insulating film;

a third insulating film over the source and drain electrode layers;

a second conductive film over the third insulating film, the second conductive film being capable of transmitting light;

a third conductive film over the second conductive film;

a fourth conductive film over the second conductive film;

a liquid crystal layer over the third conductive film; and

a second substrate over the liquid crystal layer,

wherein the second conductive film comprises a first region which is overlapped with the third conductive film and a second region which is not overlapped with the third conductive film,

wherein the first region includes a region which overlaps the first conductive film with the second insulating film and the third insulating film interposed therebetween,

wherein the second region has a larger area than the first region,

wherein the third conductive film overlaps the first conductive film along a long axis direction thereof,

wherein the semiconductor film comprises a third region whose long axis is provided along a long axis direction of the gate wiring and a fourth region whose long axis is provided along a long axis direction of one of the source and drain electrode layers,

wherein the third region includes a fifth region which is overlapped with the gate wiring,

wherein the fourth region includes a region which is overlapped with the first region and a contact hole provided in the first insulating film and the second insulating film,

wherein the fifth region is not overlapped either with the second conductive film or the third conductive film, and

wherein the gate wiring and the first conductive film are provided on a same surface.

10. The display device according to claim 9, wherein the semiconductor film is an oxide semiconductor film which comprises In, Zn and a metal other than In and Zn.

11. The display device according to claim 9, wherein a top surface of the third conductive film is in contact with the liquid crystal layer.

12. The display device according to claim 9, wherein a bottom surface of the third conductive film is in contact with a top surface of the second conductive film.

13. The display device according to claim 9, wherein the first conductive film serves as one electrode of a capacitor.

14. The display device according to claim 9, wherein the third conductive film serves as part of a pixel electrode.

15. An electronic device comprising a display portion into which the display device according to claim 9 is incorporated.

16. The display device according to claim 9,

wherein the liquid crystal layer is located between the second conductive film and the fourth conductive film, and

wherein the fourth conductive film serves as an opposite electrode.

17. A display device comprising:

a semiconductor film over a substrate;

a first insulating film over the semiconductor film;

a first conductive film over the first insulating film;

a second conductive film over the first insulating film;

a second insulating film over the first conductive film and the second conductive film;

a third conductive film over the second insulating film;

a third insulating film over the third conductive film;

a fourth conductive film over the third insulating film; and

a fifth conductive film over the fourth conductive film,

wherein the semiconductor film a first channel formation region and a second channel formation region of a transistor,

wherein the first insulating comprises a region serving as a gate insulating film of the transistor,

wherein the first conductive film comprises a region serving as a gate electrode of the transistor,

wherein the third conductive film comprises a region serving as one of a source electrode and a drain electrode,

wherein the fourth conductive film is capable of letting light through,

wherein the fifth conductive film is capable of reflecting light,

wherein the fourth conductive film comprises a first region which is overlapped with the fifth conductive film and a second region which is not overlapped with the fifth conductive film,

wherein the second region has a larger area than the first region,

wherein a long axis of the third conductive film is provided across a long axis direction of the second conductive film,

wherein the fifth conductive film comprises a region whose long axis is provided along a long axis direction of the second conductive film,

wherein the fifth conductive film comprises a region whose long axis is provided across a long axis direction of the third conductive film,

wherein the fifth conductive film comprises a region which is overlapped with the second conductive film,

wherein the fifth conductive film comprises a region which is overlapped with the third conductive film,

wherein the first conductive film and the second conductive film are formed by processing a same conductive film,

wherein the semiconductor film comprises a third region whose long axis is provided across a channel width direction of the first channel formation region and a fourth region whose long axis is provided across a channel length of the first channel formation region,

wherein the first channel formation region comprises a fifth region which is not overlapped with the fourth conductive film and the fifth conductive film, and

wherein the fourth region comprises a sixth region which is overlapped with the fourth conductive film.