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Display device and manufacturing method thereof

  • US 9,703,140 B2
  • Filed: 08/06/2015
  • Issued: 07/11/2017
  • Est. Priority Date: 12/28/2005
  • Status: Expired due to Fees
First Claim
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1. A display device comprising:

  • a transistor over a first substrate, the transistor comprising a channel formation region in a semiconductor film;

    a first insulating film over the semiconductor film;

    a gate wiring over the first insulating film;

    a first conductive film over the first substrate;

    a second insulating film over the gate wiring and the first conductive film;

    a source and drain electrode layers over the second insulating film;

    a third insulating film over the source and drain electrode layers;

    a second conductive film over the third insulating film, the second conductive film being capable of transmitting light;

    a third conductive film over the second conductive film, the third conductive film being capable of reflecting light;

    a fourth conductive film over the second conductive film;

    a liquid crystal layer over the third conductive film; and

    a second substrate over the liquid crystal layer,wherein the second conductive film comprises a first region which is overlapped with the third conductive film and a second region which is not overlapped with the third conductive film,wherein the first region includes a region which overlaps the first conductive film with the second insulating film and the third insulating film interposed therebetween,wherein the second region has a larger area than the first region,wherein the third conductive film overlaps the first conductive film along a long axis direction thereof,wherein the semiconductor film comprises a third region whose long axis is provided along a long axis direction of the gate wiring and a fourth region whose long axis is provided along a long axis direction of one of the source and drain electrode layers,wherein the third region includes a fifth region which is overlapped with the gate wiring,wherein the fourth region includes a region which is overlapped with the first region,wherein the fifth region is not overlapped either with the second conductive film or the third conductive film, andwherein the gate wiring and the first conductive film are provided on a same surface.

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