Display device
First Claim
1. A semiconductor device comprising:
- a protective circuit comprising;
a first non-linear element comprising a first oxide semiconductor layer;
a second non-linear element comprising a second oxide semiconductor layer; and
a third non-linear element comprising a third oxide semiconductor layer,wherein a first conductive layer comprises a gate electrode of the first non-linear element,wherein a second conductive layer comprises a gate electrode of the second non-linear element,wherein a third conductive layer comprises a gate electrode of the third non-linear element,wherein a fourth conductive layer comprises one of a source electrode and a drain electrode of the first non-linear element and one of a source electrode and a drain electrode of the third non-linear element and is in direct contact with the first conductive layer,wherein a fifth conductive layer comprises one of a source electrode and a drain electrode of the second non-linear element and the other of the source electrode and the drain electrode of the third non-linear element, and is in direct contact with the second conductive layer, andwherein a sixth conductive layer comprises the other of the source electrode and the drain electrode of the first non-linear element, and the other of the source electrode and the drain electrode of the second non-linear element and is in direct contact with the third conductive layer.
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Abstract
In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.
173 Citations
12 Claims
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1. A semiconductor device comprising:
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a protective circuit comprising; a first non-linear element comprising a first oxide semiconductor layer; a second non-linear element comprising a second oxide semiconductor layer; and a third non-linear element comprising a third oxide semiconductor layer, wherein a first conductive layer comprises a gate electrode of the first non-linear element, wherein a second conductive layer comprises a gate electrode of the second non-linear element, wherein a third conductive layer comprises a gate electrode of the third non-linear element, wherein a fourth conductive layer comprises one of a source electrode and a drain electrode of the first non-linear element and one of a source electrode and a drain electrode of the third non-linear element and is in direct contact with the first conductive layer, wherein a fifth conductive layer comprises one of a source electrode and a drain electrode of the second non-linear element and the other of the source electrode and the drain electrode of the third non-linear element, and is in direct contact with the second conductive layer, and wherein a sixth conductive layer comprises the other of the source electrode and the drain electrode of the first non-linear element, and the other of the source electrode and the drain electrode of the second non-linear element and is in direct contact with the third conductive layer. - View Dependent Claims (2, 3)
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4. A semiconductor device comprising:
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a substrate; and a protective circuit over the substrate, the protective circuit comprising; a first non-linear element comprising a first oxide semiconductor layer; a second non-linear element comprising a second oxide semiconductor layer; and a third non-linear element comprising a third oxide semiconductor layer, wherein a first conductive layer comprises a gate electrode of the first non-linear element, wherein a second conductive layer comprises a gate electrode of the second non-linear element, wherein a third conductive layer comprises a gate electrode of the third non-linear element, wherein a fourth conductive layer comprises one of a source electrode and a drain electrode of the first non-linear element and one of a source electrode and a drain electrode of the third non-linear element and is in direct contact with the first conductive layer, wherein a fifth conductive layer comprises one of a source electrode and a drain electrode of the second non-linear element and the other of the source electrode and the drain electrode of the third non-linear element and is in direct contact with the second conductive layer, and wherein a sixth conductive layer comprises the other of the source electrode and the drain electrode of the first non-linear element and the other of the source electrode and the drain electrode of the second non-linear element and is in direct contact with the third conductive layer. - View Dependent Claims (5, 6)
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7. A semiconductor device comprising:
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a protective circuit comprising; an insulating layer; a first non-linear element comprising a first oxide semiconductor layer; a second non-linear element comprising a second oxide semiconductor layer; and a third non-linear element comprising a third oxide semiconductor layer, wherein a first conductive layer comprises a gate electrode of the first non-linear element, wherein a second conductive layer comprises a gate electrode of the second non-linear element, wherein a third conductive layer comprises a gate electrode of the third non-linear element, wherein a fourth conductive layer comprises one of a source electrode and a drain electrode of the first non-linear element and one of a source electrode and a drain electrode of the third non-linear element, and is in direct contact with the first conductive layer, wherein a fifth conductive layer comprises one of a source electrode and a drain electrode of the second non-linear element and the other of the source electrode and the drain electrode of the third non-linear element and is in direct contact with the second conductive layer, wherein a sixth conductive layer comprises the other of the source electrode and the drain electrode of the first non-linear element and the other of the source electrode and the drain electrode of the second non-linear element and is in direct contact with the third conductive layer, and wherein the insulating layer is positioned between the first conductive layer and the fourth conductive layer. - View Dependent Claims (8, 9)
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10. A semiconductor device comprising:
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a substrate; and a protective circuit over the substrate, the protective circuit comprising; an insulating layer; a first non-linear element comprising a first oxide semiconductor layer; a second non-linear element comprising a second oxide semiconductor layer; and a third non-linear element comprising a third oxide semiconductor layer, wherein a first conductive layer comprises the first conductive layer including a gate electrode of the first non-linear element, wherein a second conductive layer comprises a gate electrode of the second non-linear element, wherein a third conductive layer comprises a gate electrode of the third non-linear element, wherein a fourth conductive layer comprises one of a source electrode and a drain electrode of the first non-linear element and one of a source electrode and a drain electrode of the third non-linear element, and is in direct contact with the first conductive layer, wherein a fifth conductive layer comprises one of a source electrode and a drain electrode of the second non-linear element and the other of the source electrode and the drain electrode of the third non-linear element, and is in direct contact with the second conductive layer, wherein a sixth conductive layer comprises the other of the source electrode and the drain electrode of the first non-linear element and the other of the source electrode and the drain electrode of the second non-linear element, and is in direct contact with the third conductive layer, and wherein the insulating layer is positioned between the first conductive layer and the fourth conductive layer. - View Dependent Claims (11, 12)
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Specification