Automatic word line leakage measurement circuitry
First Claim
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1. A method, comprising:
- setting a respective word line voltage on one of a plurality of word lines to a respective voltage level;
supplying a reference current to the one of the plurality of word lines after the respective word line voltage has been set to the respective voltage level;
comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level; and
determining whether a leakage on one of the plurality of word lines of the memory device is acceptable based on comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level.
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Abstract
The present invention is a circuit and method for measuring leakage on the plurality of word lines in a memory device. In one embodiment, a memory device may include a leakage measurement circuit that is coupled to a plurality of word lines of the memory device. The leakage measurement circuit may be operable to generate a reference current and to determine whether a leakage current on one of the plurality of word lines is acceptable relative to the reference current. In another embodiment, a method may include determining whether leakage on one of a plurality of word lines of a memory device is allowable using a circuit in the memory device.
74 Citations
26 Claims
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1. A method, comprising:
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setting a respective word line voltage on one of a plurality of word lines to a respective voltage level; supplying a reference current to the one of the plurality of word lines after the respective word line voltage has been set to the respective voltage level; comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level; and determining whether a leakage on one of the plurality of word lines of the memory device is acceptable based on comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level. - View Dependent Claims (2, 3)
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4. A method, comprising:
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generating a reference current in a memory device at one of a plurality of current values; setting a word line voltage of a word line of the memory device to a predetermined voltage; coupling the reference current to the word line; comparing the word line voltage and the predetermined voltage after the reference current is coupled to the word line; indicating a failure when the word line voltage is lower than the predetermined voltage; and indicating a pass when the word lie voltage is not lower than the predetermined voltage. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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setting a word line voltage on a word line of a memory device to a predetermined voltage; generating a reference current in the memory device; and determining if a leakage current on the word line exceeds the reference current by providing the reference current to the word line after the word line voltage of the word line has been set to the predetermined voltage and determining a change in the word line voltage, using a circuit in the memory device. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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Specification