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Automatic word line leakage measurement circuitry

  • US 9,704,542 B2
  • Filed: 09/17/2015
  • Issued: 07/11/2017
  • Est. Priority Date: 11/14/2008
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • setting a respective word line voltage on one of a plurality of word lines to a respective voltage level;

    supplying a reference current to the one of the plurality of word lines after the respective word line voltage has been set to the respective voltage level;

    comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level; and

    determining whether a leakage on one of the plurality of word lines of the memory device is acceptable based on comparing the respective word line voltage on the one of the plurality of word lines with the respective voltage level.

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