Through substrate vias with improved connections
First Claim
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1. A method of manufacturing a device, the method comprising:
- forming a dielectric structure comprising a plurality of metallization layers including at least a bottom metallization layer and a top metallization layer, the plurality of metallization layers each formed in a respective one of a plurality of dielectric layers;
forming a passivation layer over the top metallization layer of the dielectric structure;
etching a first opening in the passivation layer and the dielectric structure, wherein the first opening exposes a metal pad disposed in one of the plurality of dielectric layers;
etching a second opening through the passivation layer and the dielectric structure and into a portion of a substrate disposed below the dielectric structure, wherein the etching the first opening and the etching the second opening occur simultaneously;
lining a top surface of the passivation layer and sidewalls and a bottom surface of each of the first opening and the second opening with an insulation layer;
removing portions of the insulation layer along the bottom surface of the first opening to expose the metal pad;
after removing the portions of the insulation layer, forming a diffusion barrier layer over the top surface of the passivation layer and along the sidewalls and the bottom surface of each of the first opening and the second opening; and
simultaneously filling the first opening and the second opening with a conductive material, an uppermost surface of the conductive material extending above an uppermost surface of the passivation layer.
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Abstract
A device includes a substrate, and a plurality of dielectric layers over the substrate. A plurality of metallization layers is formed in the plurality of dielectric layers, wherein at least one of the plurality of metallization layers comprises a metal pad. A through-substrate via (TSV) extends from the top level of the plurality of the dielectric layers to a bottom surface of the substrate. A deep conductive via extends from the top level of the plurality of dielectric layers to land on the metal pad. A metal line is formed over the top level of the plurality of dielectric layers and interconnecting the TSV and the deep conductive via.
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Citations
20 Claims
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1. A method of manufacturing a device, the method comprising:
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forming a dielectric structure comprising a plurality of metallization layers including at least a bottom metallization layer and a top metallization layer, the plurality of metallization layers each formed in a respective one of a plurality of dielectric layers; forming a passivation layer over the top metallization layer of the dielectric structure; etching a first opening in the passivation layer and the dielectric structure, wherein the first opening exposes a metal pad disposed in one of the plurality of dielectric layers; etching a second opening through the passivation layer and the dielectric structure and into a portion of a substrate disposed below the dielectric structure, wherein the etching the first opening and the etching the second opening occur simultaneously; lining a top surface of the passivation layer and sidewalls and a bottom surface of each of the first opening and the second opening with an insulation layer; removing portions of the insulation layer along the bottom surface of the first opening to expose the metal pad; after removing the portions of the insulation layer, forming a diffusion barrier layer over the top surface of the passivation layer and along the sidewalls and the bottom surface of each of the first opening and the second opening; and simultaneously filling the first opening and the second opening with a conductive material, an uppermost surface of the conductive material extending above an uppermost surface of the passivation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a device, the method comprising:
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forming an interconnect structure over a substrate, the interconnect structure including a plurality of conductive pads formed in respective dielectric layers of a plurality of dielectric layers; forming a passivation layer over the interconnect structure; etching a first opening aligned with a first conductive pad, the first opening having a first width; simultaneously with etching the first opening, etching a second opening that extends at least partially through the substrate, the second opening have a second width greater than the first width; and simultaneously forming a first conductive via in the first opening and a second conductive via in the second opening, topmost surfaces of the first conductive via and the second conductive via extending above a topmost surface of the passivation layer. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a device, the method comprising:
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forming an interconnect structure over a substrate, the interconnect structure comprising; a plurality of low-k dielectric layers; a plurality of metallization layers in the plurality of low-k dielectric layers and comprising metal pads, the plurality of metallization layers including a bottom metallization layer and a top metallization layer; and a dielectric layer over the top metallization layer; etching a first opening having a first width, the first opening extending from a top surface of the dielectric layer to a bottom surface within the substrate; simultaneously with etching the first opening, etching a second opening having a second width, the second opening extending from the top surface of the dielectric layer to a first metal pad in a first one of the plurality of metallization layers; and simultaneously filling the first opening and the second opening with a conductive material to form a through substrate via (TSV) in the first opening and a deep conductive via in the second opening, uppermost surfaces of the TSV and the deep conductive via extending above the top surface of the dielectric layer. - View Dependent Claims (18, 19, 20)
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Specification