Semiconductor devices for integration with light emitting chips and modules thereof
First Claim
1. A method of forming a semiconductor device, the method comprising:
- forming uppermost metal level comprising metal lines, the uppermost metal level being formed over a semiconductor substrate;
forming light reflective/absorptive structures over the upper metal level; and
forming contact pads over the light reflective/absorptive structures by aligning the light reflective/absorptive structures to be directly below gaps between adjacent contact pads.
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Accused Products
Abstract
A semiconductor device includes an active region disposed in a semiconductor substrate and an uppermost metal level including metal lines, where the uppermost metal level is disposed over the semiconductor substrate. Contact pads are disposed at a major surface of the semiconductor device, where the contact pads are coupled to the metal lines in the uppermost metal level. An isolation region separates the contact pads disposed at the major surface. Adjacent contact pads are electrically isolated from one another by a portion of the isolation region. Reflective structures are disposed between the upper metal level and the contact pads, where each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pad.
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Citations
27 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming uppermost metal level comprising metal lines, the uppermost metal level being formed over a semiconductor substrate; forming light reflective/absorptive structures over the upper metal level; and forming contact pads over the light reflective/absorptive structures by aligning the light reflective/absorptive structures to be directly below gaps between adjacent contact pads. - View Dependent Claims (2, 3, 4, 5, 6, 7, 26, 27)
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8. A method of forming a semiconductor device, the method comprising:
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forming an active region in a semiconductor substrate; forming an uppermost metal level comprising metal lines, the uppermost metal level being formed over the semiconductor substrate; forming reflective structures over the upper metal level and the active region; forming contact pads at a major surface of the semiconductor device, the contact pads coupled to the metal lines in the uppermost metal level; and forming an isolation region separating the contact pads at the major surface, wherein forming the isolation region comprises electrically isolating adjacent contact pads from one another by a portion of the isolation region, wherein each of the reflective structures that is directly over the active region completely overlaps an associated portion of the isolation region separating the contact pads. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of forming a semiconductor device, the method comprising:
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forming an uppermost metal level comprising metal lines over a semiconductor substrate; forming light absorptive structures over the upper metal level, wherein the light absorptive structures comprise an amorphous semiconductor material; and forming contact pads over the uppermost metal level, the contact pads being formed over the light absorptive structures, the contact pads coupled to the metal lines in the uppermost metal level. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification