Manufacturing method of semiconductor device and semiconductor device
First Claim
Patent Images
1. A semiconductor device including a solid state image sensor, the semiconductor device comprising:
- a substrate including a first region and a second region adjacent to each other in an upper surface of the substrate;
a pixel including an active region partitioned by an element isolation structure in the upper surface of the substrate;
a first photodiode formed in the first region in the active region; and
a second photodiode formed separately from the first photodiode in the second region in the active region,wherein, in the active region, a portion formed in the first region and a portion formed in the second region are formed to be shifted from each other in one direction in plan view, anda level difference is formed in a layout of a periphery of the active region in plan view at a boundary between the first region and the second region.
1 Assignment
0 Petitions
Accused Products
Abstract
The performance of a solid state image sensor which is formed by performing divided exposure that exposes the entire chip by a plurality of times of exposure and in which each of a plurality of pixels arranged in a pixel array portion has a plurality of photodiodes is improved.
In the divided exposure performed when the solid state image sensor is manufactured, a dividing line that divides an exposure region is defined to be located between a first photodiode and a second photodiode aligned in a first direction in an active region in a pixel and is defined to be along a second direction perpendicular to the first direction.
9 Citations
5 Claims
-
1. A semiconductor device including a solid state image sensor, the semiconductor device comprising:
-
a substrate including a first region and a second region adjacent to each other in an upper surface of the substrate; a pixel including an active region partitioned by an element isolation structure in the upper surface of the substrate; a first photodiode formed in the first region in the active region; and a second photodiode formed separately from the first photodiode in the second region in the active region, wherein, in the active region, a portion formed in the first region and a portion formed in the second region are formed to be shifted from each other in one direction in plan view, and a level difference is formed in a layout of a periphery of the active region in plan view at a boundary between the first region and the second region. - View Dependent Claims (2, 3, 4, 5)
-
Specification