Multi-wafer based light absorption apparatus and applications thereof

• US 9,704,916 B2
• Filed: 07/25/2016
• Issued: 07/11/2017
• Est. Priority Date: 07/24/2015
• Status: Active Grant

• Current Assignee: Artilux, Inc.
• Original Assignee: Artilux, Inc.
• Inventors: Cheng, Szu-Lin, Liu, Han-Din, Na, Yun-Chung, Chen, Hui-Wen, Chen, Shu-Lu
• Primary Examiner(s): Gebreyesus, Yosef
• Application Number:
  US15/219,200
• Publication Number:
  US 20170025454A1
• Time in Patent Office: 351 Days
• CPC Class Codes: H01L 27/14629 Reflectors
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 31/02005 for device characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0549 comprising spectrum splitting means, e.g. dichroic mirrors
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: H01L 31/1812 including only AIVBIV alloys, e.g. SiGe
• CPC Class Codes: H01L 31/1892 methods involving the use of temporary, removable substrates
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs'"'"' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.

Claims

1. A multi-wafer based semiconductor light absorption structure comprising:

a first wafer bonded with a second wafer;

a light absorption region located in the first wafer;

a contact region located in the first wafer, immediately above the light absorption region and in physical contact with the light absorption region; and

a bonding interface between the first wafer and the second wafer, the bonding interface located below the light absorption region and not in physical contact with the light absorption region.

2. The structure of claim 1, further comprising:

a first mirror region, wherein the light absorption region is located in between the first mirror region and the contact region.

3. The structure of claim 2, wherein the first mirror region comprises a plurality of mirror layers, and wherein at least two mirror layers are separated by the bonding interface.

4. The structure of claim 2, wherein at least a part of the first mirror region is located in the first wafer, the first mirror region including a first mirror layer and a second mirror layer, the second mirror layer being closer to the light absorption region, wherein the first mirror layer is metal and the second mirror layer is dielectric.

5. The structure of claim 2, further comprising:

a second mirror region, wherein the contact region is located in between the second mirror region and the light absorption region.

6. The structure of claim 5, wherein the second mirror region is a partial mirror and the first mirror region is a full mirror.

7. The structure of claim 6, further comprising:

an optical passage configured to allow incident light to enter the light absorption region through the second mirror region.

8. The structure of claim 5, wherein the second mirror region is a full mirror and the first mirror region is a partial mirror.

9. The structure of claim 8, wherein incident light is to enter from the second wafer.

10. The structure of claim 9, further comprising:

an optical passage configured to allow incident light to enter the light absorption region through the first mirror region.

11. The structure of claim 2, wherein incident light is to enter from the first wafer through the contact region to the light absorption region, being reflected by the first mirror region and back to the light absorption region.

12. The structure of claim 1, further comprising:

a first mirror region and a second mirror region, wherein one of the first and second mirror regions is a partial mirror through which the incident light for the light absorption region is to enter.

13. The structure of claim 1, further comprising:

a first mirror region located above the contact region.

14. The structure of claim 13, wherein the first mirror region is completely located in the first wafer.

15. The structure of claim 1, wherein incident light is to enter from the second wafer, through the bonding interface, into the light absorption region.

16. The structure of claim 15, further comprising:

an optical passage located in the second wafer and configured to allow incident light to enter the light absorption region.

17. The structure of claim 1, wherein a width of the contact region is larger than a width of the light absorption region.

18. The structure of claim 1, further comprising:

a vertical contact via in electrical contact with the contact region and extending toward the bonding interface.

19. A light absorption apparatus comprising:

a contact region;

a light absorption region beneath the contact region, wherein light is incident from the contact region traveling along a first direction toward the light absorption region, the light absorption region having a smaller width than the contact region; and

an optical mirror structure coupled to the light absorption region, such that the light is incident through the contact region and the light absorption region to the optical mirror structure and reflected back to the light absorption region,

wherein the optical mirror structure includes a plurality of mirror layers, at least two mirror layers being separated by a bonding interface between two wafers.

20. The structure of claim 19, wherein the contact region and light absorption region have a different doping polarity, and wherein photo-generated electrical carriers flow primarily in parallel to the first direction.

21. The structure of claim 19, wherein the optical mirror structure includes (1) a metal layer and (2) a dielectric layer located between the metal layer and the light absorption region.