Semiconductor device

• US 9,704,996 B2
• Filed: 09/04/2014
• Issued: 07/11/2017
• Est. Priority Date: 04/12/2000
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Satake, Rumo, Kimura, Hajime
• Primary Examiner(s): PRENTY, MARK V
• Application Number:
  US14/476,810
• Publication Number:
  US 20140367690A1
• Time in Patent Office: 1,041 Days
• Field of Search: 257 59, 257 72
• CPC Class Codes: G02B 6/0028 Light guide, e.g. taper
• CPC Class Codes: G02B 6/0031 Reflecting element, sheet or layer
• CPC Class Codes: G02B 6/0038 Linear indentations or grooves, e.g. arc-shaped grooves or meandering grooves, extending over the full length or width of the light guide
• CPC Class Codes: G02B 6/0043 provided on the surface of the light guide
• CPC Class Codes: G02B 6/0046 Tapered light guide, e.g. wedge-shaped light guide
• CPC Class Codes: G02B 6/0055 Reflecting element, sheet or layer
• CPC Class Codes: G02F 1/1336 Illuminating devices
• CPC Class Codes: G02F 1/133615 Edge-illuminating devices, i.e. illuminating from the side
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785

Abstract

A semiconductor device comprises a semiconductor film and a gate electrode with a gate insulating film interposed therebetween, a conductive film, an insulating film over the gate electrode and the conductive film, and a gate wiring over the insulating film. The gate wiring extends across the conductive film.

Claims

1. A semiconductor device comprising:

a semiconductor film and a gate electrode with a gate insulating film interposed therebetween;

a conductive film;

an insulating film over the gate electrode and the conductive film; and

a gate wiring over the gate electrode and the conductive film,

wherein the insulating film comprises an organic insulating material,

wherein the gate electrode and the conductive film each comprise the same material, and

wherein the gate wiring extends across the conductive film.

2. A semiconductor device according to claim 1, further comprising:

a second conductive film over the insulating film,

wherein the conductive film is electrically connected to the semiconductor film through the second conductive film.

3. A semiconductor device according to claim 1, wherein the gate electrode is over the semiconductor film.

4. A semiconductor device according to claim 1, further comprising a liquid crystal layer over the gate wiring.

5. A semiconductor device according to claim 1, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system.

6. A semiconductor device comprising:

a first conductive film including a gate electrode portion and a capacitor electrode portion;

a first semiconductor film;

a gate insulating film between the gate electrode portion and the first semiconductor film;

an insulating film over the first conductive film;

a gate wiring over the insulating film; and

a capacitor comprising the capacitor electrode portion as a first capacitor electrode and a second semiconductor film as a second capacitor electrode,

wherein the first conductive film extends across the gate wiring.

7. A semiconductor device according to claim 6, wherein the insulating film comprises an organic resin material.

8. A semiconductor device according to claim 6, further comprising:

a second conductive film; and

a third conductive film over the insulating film,

wherein the second conductive film is electrically connected to the first semiconductor film through the third conductive film.

9. A semiconductor device according to claim 6, wherein the first conductive film is over the first semiconductor film.

10. A semiconductor device according to claim 6, further comprising a liquid crystal layer over the gate wiring.

11. A semiconductor device according to claim 6, wherein the semiconductor device is incorporated in at least one selected from the group consisting of a personal computer, a digital camera, a mobile telephone, a video camera, a mobile computer, a head mount display, a television, an electronic book, a player which use a recording medium, and a navigation system.

12. A semiconductor device according to claim 6, wherein bottom surfaces of the first semiconductor film and the second semiconductor film are coplanar.