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Semiconductor device including first and second gate electrodes and stack of insulating layers

  • US 9,705,003 B2
  • Filed: 04/02/2015
  • Issued: 07/11/2017
  • Est. Priority Date: 03/27/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode;

    a gate insulating layer over the first gate electrode;

    an oxide semiconductor layer over the gate insulating layer;

    a first electrode layer and a second electrode layer in contact with the oxide semiconductor layer;

    a first insulating layer over the first electrode layer and the second electrode layer;

    a second insulating layer over the first insulating layer; and

    a second gate electrode over the second insulating layer,wherein the first insulating layer is a resin layer, andwherein the second insulating layer comprises one compound selected from the group consisting of silicon nitride, silicon oxynitride, and silicon nitride oxide.

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