Semiconductor device and manufacturing method of the same

• US 9,705,006 B2
• Filed: 10/22/2015
• Issued: 07/11/2017
• Est. Priority Date: 12/28/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Endo, Yuta
• Primary Examiner(s): Everhart, Caridad
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US14/920,259
• Publication Number:
  US 20160049518A1
• Time in Patent Office: 628 Days
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 28/60 Electrodes
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor.

Claims

1. A semiconductor device comprising:

a transistor comprising;

a first gate electrode layer;

a first insulating layer over the first gate electrode layer;

a first oxide semiconductor layer over the first insulating layer;

a second insulating layer over the oxide semiconductor layer; and

a second gate electrode layer over the second insulating layer; and

a capacitor element comprising;

a second oxide semiconductor layer; and

a transparent conductive layer over the second oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a c-axis aligned crystalline oxide semiconductor,

wherein the second oxide semiconductor layer is in contact with a nitride insulating layer so that hydrogen in the nitride insulating layer is diffused into the second oxide semiconductor layer, and

wherein the nitride insulating layer is different from the first insulating layer and the second insulating layer.

2. The semiconductor device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.

3. The semiconductor device according to claim 1, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, tin, and zinc.

4. The semiconductor device according to claim 1, wherein a concentration of carbon in the first oxide semiconductor is less than or equal to 3×

10¹⁸/cm³.

5. The semiconductor device according to claim 1, wherein the second insulating layer comprises an oxide insulating material selected from silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, gallium oxide, and a Ga—

Zn-based metal oxide.

6. The semiconductor device according to claim 1, wherein the transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor.

7. The semiconductor device according to claim 1, wherein the nitride insulating layer is under the second oxide semiconductor layer.

8. A semiconductor device comprising:

a transistor comprising;

a first gate electrode layer;

a first insulating layer over the first gate electrode layer;

a first oxide semiconductor layer over the first insulating layer;

a second insulating layer over the oxide semiconductor layer; and

a second gate electrode layer over the second insulating layer; and

a capacitor element comprising;

a second oxide semiconductor layer; and

a transparent conductive layer over the second oxide semiconductor layer,

wherein the first oxide semiconductor layer comprises a nanocrystalline oxide semiconductor,

wherein the second oxide semiconductor layer is in contact with a nitride insulating layer so that hydrogen in the nitride insulating layer is diffused into the second oxide semiconductor layer, and

wherein the nitride insulating layer is different from the first insulating layer and the second insulating layer.

9. The semiconductor device according to claim 8, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, gallium, and zinc.

10. The semiconductor device according to claim 8, wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises indium, tin, and zinc.

11. The semiconductor device according to claim 8, wherein a concentration of carbon in the first oxide semiconductor is less than or equal to 3×

10¹⁸/cm³.

12. The semiconductor device according to claim 8, wherein the second insulating layer comprises an oxide insulating material selected from silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, gallium oxide, and a Ga—

Zn-based metal oxide.

13. The semiconductor device according to claim 8, wherein the transparent conductive layer is electrically connected to one of a source electrode layer and a drain electrode layer of the transistor.

14. The semiconductor device according to claim 8, wherein the nitride insulating layer is under the second oxide semiconductor layer.