Light-emitting device

• US 9,705,040 B2
• Filed: 11/12/2015
• Issued: 07/11/2017
• Est. Priority Date: 11/13/2014
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Seung-woo, Ha, Jong-hoon, Song, Sang-yeob, Kim, Gi-bum, Sim, Jae-in
• Primary Examiner(s): HO, HOANG QUAN TRAN
• Application Number:
  US14/939,817
• Publication Number:
  US 20160141457A1
• Time in Patent Office: 607 Days
• Field of Search: None
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting device includes: a substrate; a light-emitting structure including first and second nitride-based semiconductor layers on the substrate and an active layer between the first and second nitride-based semiconductor layers; an insulating layer on a top surface of the light-emitting structure; a protrusion on the insulating layer, a top surface of the protrusion being larger than a bottom surface thereof, the protrusion having a trapezoidal cross-section; a transparent conductive layer covering a top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion and having a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion; and an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer.

Claims

1. A light-emitting device comprising:

a substrate;

a light-emitting structure including first and second nitride-based semiconductor layers on the substrate, and an active layer between the first and second nitride-based semiconductor layers;

an insulating layer on a top surface of the light-emitting structure;

a protrusion on the insulating layer, a top surface of the protrusion being smaller than a bottom surface thereof, the protrusion having a trapezoidal cross-section;

a transparent conductive layer covering the top surface of the light-emitting structure, a top surface of the insulating layer, and the top surface of the protrusion; and

an electrode covering at least one of inclined surfaces of the protrusion on the transparent conductive layer,

wherein the electrode has an inclined surface inclined relative to the substrate at a region where the electrode covers the at least one of the inclined surfaces of the protrusion.

2. The light-emitting device of claim 1, wherein the protrusion includes a first side surface inclined at a first angle with respect to the substrate, and a second side surface inclined at a second angle with respect to the substrate, the electrode covers a portion of the top surface of the protrusion and the second side surface of the protrusion, and the first side surface of the protrusion is uncovered by the electrode.

3. The light-emitting device of claim 2, wherein the electrode extends to cover a portion of the top surface of the insulating layer that is adjacent to the second side surface of the protrusion.

4. The light-emitting device of claim 1, wherein the electrode covers a side surface of the protrusion and a portion of the top surface of the insulating layer that is adjacent to the side surface of the protrusion, with the transparent conductive layer being disposed therebetween.

5. The light-emitting device of claim 1, wherein a bottom surface of the electrode has a height of a first level in a first region covering the top surface of the protrusion and has a height of a second level in a second region covering the top surface of the insulating layer, and the height of the first level is higher than the height of the second level.

6. The light-emitting device of claim 1, wherein the protrusion is composed of a same material as the insulating layer.

7. The light-emitting device of claim 1, wherein the protrusion is composed of a same material as the transparent conductive layer.

8. The light-emitting device of claim 1, wherein a cross-sectional area of the top surface of the insulating layer is larger than a cross-sectional area of the bottom surface of the protrusion.

9. The light-emitting device of claim 1, wherein the transparent conductive layer has a constant thickness along the top surface of the light-emitting structure, the top surface of the insulating layer, and the top surface of the protrusion.

17. The light-emitting device of claim 1, wherein a width of a bottom surface of the protrusion is smaller than a width of a top surface of the insulating layer.

10. A light-emitting device comprising:

a light-emitting structure including first and second nitride-based semiconductor layers, and an active layer disposed between the first and second nitride-based semiconductor layers;

an insulating layer formed on the light-emitting structure;

a protrusion protruding from the insulating layer in a direction away from the light-emitting structure, and having first and second inclined surfaces and a top surface intersected by the first and second inclined surfaces;

an electrode covering at least a portion of the second inclined surface and not covering the entire top surface of the protrusion; and

a transparent conductive layer interposed between the electrode and the protrusion, electrically connected to the first nitride-based semiconductor layer, and at least extending between opposite sides of the insulating layer to cover the protrusion and the insulating layer,

wherein the electrode has an inclined surface inclined relative to a substrate at a region where the electrode covers the portion of the second inclined surface.

11. The light-emitting device of claim 10, wherein the first inclined surface of the protrusion is uncovered by the electrode.

12. The light-emitting device of claim 10, wherein the transparent conductive layer has a constant thickness.

19. The light-emitting device of claim 10, wherein a width of a bottom surface of the protrusion is smaller than a width of a top surface of the insulating layer.

13. A light-emitting device comprising:

a light-emitting structure including first and second nitride-based semiconductor layers, and an active layer between the first and second nitride-based semiconductor layers;

an insulating layer on a top surface of the light-emitting structure;

a protrusion protruding from the insulating layer, and having first and second inclined surfaces and a top surface intersected by the first and second inclined surfaces;

a transparent conductive layer covering the top surface of the light-emitting structure, a top surface of the insulating layer, top surfaces of the first and second inclined surfaces, and the top surface of the protrusion; and

an electrode covering at least the first inclined surface of the protrusion on the transparent conductive layer and a portion of the top surface of the protrusion, and having an inclined surface at an interface between the electrode and the inclined surface of the protrusion,

wherein the transparent conductive layer extends continuously from the top surface of the light emitting structure across the first and second inclined surfaces to the top surface of the protrusion.

14. The light-emitting device of claim 13, wherein the electrode extends to cover a portion of the top surface of the insulating layer that is adjacent to the second inclined surface of the protrusion.

15. The light-emitting device of claim 13, wherein the electrode covers portions of the top surface of the insulating layer adjacent to the first and second inclined surfaces, with the transparent conductive layer being disposed therebetween.

16. The light-emitting device of claim 13, wherein a bottom surface of the electrode has a first height of a first level in a first region covering the top surface of the protrusion and has a second height of a second level in a second region covering the top surface of the insulating layer, and the first height is higher than the second height.

18. The light-emitting device of claim 13, wherein a width of a bottom surface of the protrusion is in a range of about 10 μ

m and about 20 μ

m and a width of a bottom surface of the insulating layer is in a range of about 100 μ

m and about 200 μ

m.

20. The light-emitting device of claim 15, wherein a width of a bottom surface of the protrusion is in a range of about 10 μ

m and about 20 μ

m and a width of a bottom surface of the insulating layer is in a range of about 100 μ

m and about 200 μ

m.