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Light emitting diode having distributed bragg reflectors (DBR) and manufacturing method thereof

  • US 9,705,045 B2
  • Filed: 02/17/2016
  • Issued: 07/11/2017
  • Est. Priority Date: 02/17/2015
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED) having distributed Bragg reflector, comprising:

  • an epitaxial layer having a first semiconductor layer, a light emitting layer and a second semiconductor layer, wherein the light emitting layer is interposed between the first semiconductor layer and the second semiconductor layer;

    a transparent conductive layer disposed on the second semiconductor layer;

    a Bragg reflective layer disposed on the transparent conductive layer and having a plurality of first through holes penetrating through the Bragg reflective layer;

    a first electrode electrically connected to the first semiconductor layer;

    a second electrode electrically connected to the transparent conductive layer; and

    a plurality of intervals in adjoining through holes of the plurality of first through holes and a plurality of distances between the plurality of first through holes and the second electrode, wherein the plurality of intervals gradually decrease as the plurality of distances gradually increase.

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