Method of attaching a light emitting device to a support substrate

• US 9,705,047 B2
• Filed: 03/10/2016
• Issued: 07/11/2017
• Est. Priority Date: 06/01/2011
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Koninklijke Philips N.V.
• Inventors: Steigerwald, Daniel Alexander, Bhat, Jerome Chandra, Akram, Salman
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US15/066,237
• Publication Number:
  US 20160197244A1
• Time in Patent Office: 488 Days
• Field of Search: 438 28, 438 39, 438 38, 438667
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 25/075 the devices being of a type provided for in group H01L33/00
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/483 Containers
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Claims

1. A device comprising:

a semiconductor light emitting device comprising;

a light emitting layer sandwiched between an n-type region and a p-type region;

an n-contact disposed on the n-type region, wherein the n-contact comprises a continuous metal or stack of metals that is set back from an edge of the n-type region such that the n-contact does not cover the edge of the n-type region; and

a reflective dielectric layer disposed on said edge of the n-type region;

a support substrate comprising a body, wherein a width of the support substrate is the same as a width of the semiconductor light emitting device; and

a plurality of vias formed in the body.

2. The device of claim 1 wherein the reflective dielectric layer extends over the edge of the n-type region and covers a sidewall of the n-type region.

3. The device of claim 1 wherein the reflective dielectric layer is a reflective dielectric stack.

4. The device of claim 1 wherein the vias extend completely through the body and expose a metal layer at tops of the vias.

5. The device of claim 1 further comprising a passivation layer formed on sidewalls of the vias.

6. The device of claim 1 wherein the vias have angled sidewalls.

7. The device of claim 1 further comprising a polymer layer disposed over the reflective dielectric layer in direct contact with the reflective dielectric layer.

8. The device of claim 7 wherein the polymer layer is doped with a light absorbing material.

9. The device of claim 7 wherein the polymer is doped with a light scattering material.

10. The device of claim 1 further comprising a dielectric layer disposed on sidewalls of the vias, wherein the dielectric layer is patterned to expose a metal layer at tops of the vias.

11. The device of claim 10 further comprising a metal disposed in the vias overlying the dielectric layer.

12. The device of claim 11 wherein the metal is copper.

13. The device of claim 11 wherein the metal is disposed on a surface of the body outside the vias, and the metal disposed on the surface of the body is between 1 μ

m and 20 μ

m thick.

14. The device of claim 11 wherein the metal completely fills the vias.

15. The device of claim 11 wherein the metal does not completely fill the vias.