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Light emitting diodes

  • US 9,705,055 B2
  • Filed: 12/27/2012
  • Issued: 07/11/2017
  • Est. Priority Date: 03/30/2012
  • Status: Active Grant
First Claim
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1. A light emitting diode, comprising:

  • a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode, the first semiconductor layer, the active layer and the second semiconductor layer being stacked in that order and located on a surface of the first electrode, the second electrode electrically connected with the second semiconductor layer;

    wherein the second semiconductor layer comprises a body and a plurality of three-dimensional nano-structures located on a body surface away from the active layer, the plurality of three-dimensional nano-structures are linear protruding structures that are spaced from each other, a cross-section of each linear protruding structure is a semicircle, the diameter of each semicircle linear protruding structure is 320 nm, and the distance between adjacent three-dimensional nano-structures is 140 nm;

    wherein the plurality of three-dimensional nano-structures are substantially parallel with each other and extend along the body surface, and each of the plurality of three-dimensional nano-structures extends from a first side of the body surface to a second side opposite to the first side and has a length equal to a width of the body surface from the first side to the second side; and

    each of the first electrode and the second electrode is a carbon nanotube film, wherein a light extraction intensity of the light emitting diode is about 500 A.U. at a wavelength of about 530 nm.

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