Light emitting diodes

• US 9,705,055 B2
• Filed: 12/27/2012
• Issued: 07/11/2017
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: Jin, Yuan-Hao, Li, Qun-Qing, Fan, Shou-Shan
• Primary Examiner(s): Kim, Su C
• Application Number:
  US13/728,054
• Publication Number:
  US 20130256725A1
• Time in Patent Office: 1,657 Days
• Field of Search: 257 9- 39, 257 79-103, 257918, 257E51018-E51022, 257E33001-E3307, 257E33054, 257E25028, 257E25032, 257E39, 257E51038-E5104, 257E23074, 257E23165, 257E29069-E29071, 257E29245, 257E49001-E49004, 438 22- 47, 438 69, 438493, 438503, 438507, 438775-777, 438956, 438962
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

An LED comprises a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked in that order and located on a surface of the first electrode. The second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on a surface of the second semiconductor layer away from the active layer. The first three-dimensional nano-structures are linear protruding structures, a cross-section of each linear protruding structure is an arc.

Claims

1. A light emitting diode, comprising:

a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode, the first semiconductor layer, the active layer and the second semiconductor layer being stacked in that order and located on a surface of the first electrode, the second electrode electrically connected with the second semiconductor layer;

wherein the second semiconductor layer comprises a body and a plurality of three-dimensional nano-structures located on a body surface away from the active layer, the plurality of three-dimensional nano-structures are linear protruding structures that are spaced from each other, a cross-section of each linear protruding structure is a semicircle, the diameter of each semicircle linear protruding structure is 320 nm, and the distance between adjacent three-dimensional nano-structures is 140 nm;

wherein the plurality of three-dimensional nano-structures are substantially parallel with each other and extend along the body surface, and each of the plurality of three-dimensional nano-structures extends from a first side of the body surface to a second side opposite to the first side and has a length equal to a width of the body surface from the first side to the second side; and

each of the first electrode and the second electrode is a carbon nanotube film, wherein a light extraction intensity of the light emitting diode is about 500 A.U. at a wavelength of about 530 nm.

2. The light emitting diode of claim 1, wherein the body and the plurality of three-dimensional nano-structures are an integrated structure.

3. The light emitting diode of claim 1, wherein the plurality of three-dimensional nano-structures are substantially equidistantly arranged and arranged along a same direction.