Apparatus and techniques to treat substrates using directional plasma and reactive gas
First Claim
1. An apparatus to treat a substrate, comprising:
- a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate;
a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction; and
a substrate stage configured to hold the substrate, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and
a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and the substrate stage,wherein the reactive gas sources is a first reactive gas source, the apparatus further comprising a second reactive gas source having a second outlet directing the first reactive gas to the substrate, the plasma chamber being disposed between the first reactive gas source and the second reactive gas source, wherein the substrate stage is movable in a sequence between the first position, second position and a third position facing the second reactive gas source.
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Accused Products
Abstract
An apparatus to treat a substrate. The apparatus may include a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and substrate stage.
22 Citations
14 Claims
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1. An apparatus to treat a substrate, comprising:
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a reactive gas source having a reactive gas outlet disposed in a process chamber, the reactive gas outlet to direct a first reactive gas to the substrate; a plasma chamber coupled to the process chamber and including an extraction plate having an extraction aperture extending along a first direction; and a substrate stage configured to hold the substrate, disposed within the process chamber and movable along a second direction perpendicular to the first direction between a first position facing the reactive gas source and a second position facing the extraction aperture; and a gas flow restrictor disposed between the reactive gas outlet and the extraction aperture, the gas flow restrictor defining a differential pumping channel between at least the plasma chamber and the substrate stage, wherein the reactive gas sources is a first reactive gas source, the apparatus further comprising a second reactive gas source having a second outlet directing the first reactive gas to the substrate, the plasma chamber being disposed between the first reactive gas source and the second reactive gas source, wherein the substrate stage is movable in a sequence between the first position, second position and a third position facing the second reactive gas source. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of etching a substrate, comprising;
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directing a reactive gas to the substrate when the substrate is disposed in a process chamber, wherein a first product layer comprising the reactive gas and material from the substrate is formed on an outer surface of the substrate; extracting an ion beam from a plasma chamber through an extraction aperture, wherein the ion beam impacts an exposed portion of the substrate; and scanning a substrate stage holding the substrate along a scan direction with respect to the extraction aperture, wherein the first product layer is etched from the substrate in the exposed portion, and is not etched from the substrate in an unexposed portion of the substrate, the unexposed portion not being exposed to the ion beam, wherein the directing the reactive gas to the substrate comprises sending the reactive gas into the plasma chamber through a reactive gas outlet, wherein the reactive gas flows through the extraction aperture to the substrate, the method further comprising; sending an OPEN signal to the reactive gas outlet and a positive bias signal to bias the substrate positively with respect to the plasma chamber when the reactive gas outlet is open; and sending a negative bias signal to bias the substrate stage negatively with respect to the plasma chamber when the reactive gas outlet is closed. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification