Method and system for heterogeneous substrate bonding for photonic integration

• US 9,709,735 B2
• Filed: 10/12/2015
• Issued: 07/18/2017
• Est. Priority Date: 10/13/2009
• Status: Active Grant

• Current Assignee: Skorpios Technologies Inc.
• Original Assignee: Skorpios Technologies Inc.
• Inventors: Krasulick, Stephen B., Dallesasse, John
• Primary Examiner(s): Luu, Chuong A
• Assistant Examiner(s): Fortich, Rodolfo D
• Application Number:
  US14/880,936
• Publication Number:
  US 20160202415A1
• Time in Patent Office: 645 Days
• Field of Search: 438 26, 438 23, 438 25, 438 27, 438 22
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/12002 Three-dimensional structures
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/136 by etching
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/16 the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/0237 by soldering
• CPC Class Codes: H01S 5/1003 Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids

Abstract

A method of fabricating a composite integrated optical device includes providing a substrate comprising a silicon layer, forming a waveguide in the silicon layer, and forming a layer comprising a metal material coupled to the silicon layer. The method also includes providing an optical detector, forming a metal-assisted bond between the metal material and a first portion of the optical detector, forming a direct semiconductor-semiconductor bond between the waveguide, and a second portion of the optical detector.

Claims

1. A hybrid integrated optical device comprising:

a substrate comprising a silicon layer;

a first pad, disposed on a first region of the silicon layer and bonded to the silicon layer;

a compound semiconductor device;

a second pad, disposed on a first region of the compound semiconductor device and bonded to the compound semiconductor device; and

a bonding metal, wherein;

the bonding metal comprises In_0.7Pd_0.3;

the bonding metal is disposed between the first pad and the second pad;

the bonding metal is bonded to the first pad and the second pad; and

the bonding metal, the first pad, and the second pad secure the compound semiconductor device to the silicon layer of the substrate;

and wherein;

the substrate and the compound semiconductor bond to form a second bond between a second region of the silicon layer and a second region of the compound semiconductor device, and the second bond is one of;

a direct semiconductor/semiconductor bond, or

a metal-assisted semiconductor/semiconductor bond that includes a metal interface layer having a thickness of less than 100 Å

, wherein the metal interface layer is between the second region of the silicon layer and the second region of the compound semiconductor device.

2. The hybrid integrated optical device of claim 1, wherein the bonding metal is In_0.7Pd_0.3.

3. The hybrid integrated optical device of claim 1, wherein:

the first pad comprises at least one of Ti, Cr, Pt, Ni or W; and

the second pad comprises at least one of Ti, Cr, Pt, Ni or W.

4. The hybrid integrated optical device of claim 1, wherein the substrate is a silicon-on-insulator substrate comprising a silicon handle portion, an oxide layer, and the silicon layer.

5. The hybrid integrated optical device of claim 1, wherein:

the second bond is the metal-assisted semiconductor/semiconductor bond;

the silicon layer includes a third region;

the compound semiconductor device includes a third region; and

the third region of the silicon layer and the third region of the compound semiconductor device are bonded by a direct semiconductor/semiconductor bond.

6. The hybrid integrated optical device of claim 5, further comprising a light-emitting device that is operable to emit light through the direct semiconductor/semiconductor bond.

7. The hybrid integrated optical device of claim 6, wherein the light-emitting device is a III-V optical device.

8. The hybrid integrated optical device of claim 6, wherein the light-emitting device is an optical generator.

9. The hybrid integrated optical device of claim 5, wherein light propagates parallel to an interface between the third region of the silicon layer and the third region of the compound semiconductor device, such that the light evanescently couples across the direct semiconductor/semiconductor bond, between the silicon layer and the compound semiconductor device.

10. The hybrid integrated optical device of claim 1, wherein a first portion of the silicon layer forms a recess proximate the first pad, and wherein a top surface of the compound semiconductor device is coplanar with a second portion of the silicon layer.

11. The hybrid integrated optical device of claim 1, further comprising a planarizing material.

12. The hybrid integrated optical device of claim 11, wherein at least a portion of the planarizing material is removed, and further comprising an interconnect metal that provides electrical connectivity to at least one of the compound semiconductor device and the silicon layer, at a location where the portion of the planarizing material is removed.

13. A hybrid integrated optical device comprising:

a first semiconductor comprising a first optical element;

a first pad, disposed on a first region of the first semiconductor and bonded to the first semiconductor;

a second semiconductor comprising a second optical element;

a second pad, disposed on a first region of the second semiconductor and bonded to the second semiconductor; and

a bonding metal, wherein;

the bonding metal is In_0.7Pd_0.3;

the bonding metal is disposed between the first pad and the second pad;

the bonding metal is bonded to the first pad and the second pad; and

the bonding metal, the first pad, and the second pad secure the first semiconductor to the second semiconductor; and

the first optical element is directly optically coupled with the second optical element;

and wherein;

the first semiconductor and the second semiconductor bond to form a second bond between a second region of the first semiconductor and a second region of the second semiconductor, and the second bond is one of;

a direct semiconductor/semiconductor bond, or

a metal-assisted semiconductor/semiconductor bond that includes a metal interface layer having a thickness of less than 100 Å

, wherein the metal interface layer is between the second region of the first semiconductor and the second region of the second semiconductor.

14. The hybrid integrated optical device of claim 13, wherein the first optical element is a waveguide.

15. The hybrid integrated optical device of claim 14, further comprising an index matching material that optically couples the waveguide directly with the second optical element.

16. The hybrid integrated optical device of claim 13, wherein:

the first pad comprises at least one of Ti, Cr, Pt, Ni or W; and

the second pad comprises at least one of Ti, Cr, Pt, Ni or W.

17. The hybrid integrated optical device of claim 13, wherein the second semiconductor comprises a gain medium.

18. The hybrid integrated optical device of claim 17, wherein:

the second bond is the direct semiconductor/semiconductor bond, and

the gain medium forms at least part of a light-emitting device that is operable to emit light through the direct semiconductor/semiconductor bond.

19. The hybrid integrated optical device of claim 13, wherein:

the second bond is the metal-assisted semiconductor/semiconductor bond, and

the metal-assisted semiconductor/semiconductor bond provides an ohmic contact between the first semiconductor and the second semiconductor.