Systems and methods for sub-zero threshold characterization in a memory cell
First Claim
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1. A memory system, comprising:
- a memory cell characterization circuit operable to;
program a first cell of a solid state memory device to a negative voltage;
program a second cell of the solid state memory device to a positive voltage;
detect a voltage shift in the first cell when the second cell is being programmed;
characterize the negative voltage of the first cell offset by the voltage shift as an interim voltage of the first cell; and
calculate an actual voltage based on the voltage shift and the interim voltage.
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Abstract
Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.
58 Citations
19 Claims
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1. A memory system, comprising:
a memory cell characterization circuit operable to; program a first cell of a solid state memory device to a negative voltage; program a second cell of the solid state memory device to a positive voltage; detect a voltage shift in the first cell when the second cell is being programmed; characterize the negative voltage of the first cell offset by the voltage shift as an interim voltage of the first cell; and calculate an actual voltage based on the voltage shift and the interim voltage. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for characterizing a solid state memory device, the method comprising:
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programming a negative voltage to a first cell of a solid state memory device; programming a positive voltage to a second cell of the solid state memory device; detecting a voltage shift on the first cell when the second cell is being programmed; characterizing the negative voltage of the first cell offset by the voltage shift as an interim voltage of the first cell; and calculating an actual voltage based on the voltage shift and the interim voltage. - View Dependent Claims (14, 15, 16)
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17. An electronic device, comprising:
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a solid state memory device; and a memory cell characterization circuit operable to; program a first cell of a solid state memory device to a negative voltage; program a second cell of the solid state memory device to a positive voltage; detect a voltage shift in the first cell when the second cell is being programmed; characterize the negative voltage of the first cell offset by the voltage shift as an interim voltage of the first cell; and calculate an actual voltage based on the voltage shift and the interim voltage. - View Dependent Claims (18, 19)
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Specification