Display device and electronic appliance
First Claim
Patent Images
1. A display device comprising:
- a transistor comprising;
a gate electrode;
a first insulating film over the gate electrode;
a first oxide film over the first insulating film;
a second oxide film over the first oxide film;
a third oxide film over the second oxide film; and
a first conductive film over the third oxide film;
a second insulating film over the first conductive film and the third oxide film;
a second conductive film over the second insulating film; and
a connection portion comprising;
the first insulating film;
a third conductive film over the first insulating film;
the second insulating film over the third conductive film; and
a fourth conductive film over the second insulating film,wherein the second conductive film is electrically connected to the first conductive film through a first opening provided in the second insulating film,wherein the fourth conductive film is electrically connected to the third conductive film through a second opening provided in the second insulating film,wherein the first conductive film comprises the same material as the third conductive film,wherein the second conductive film comprises the same material as the fourth conductive film,wherein an atomic ratio of components in the first oxide film is different from an atomic ratio of components in the second oxide film, andwherein an atomic ratio of components in the third oxide film is different from the atomic ratio of components in the second oxide film.
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Abstract
A display device with low manufacturing cost, a display device with low power consumption, a display device capable of being formed over a large substrate, a display device with a high aperture ratio of a pixel, and a display device with high reliability are provided. The display device includes a transistor electrically connected to a light-transmitting pixel electrode and a capacitor. The transistor includes a gate electrode, a gate insulating film, and a first multilayer film including an oxide semiconductor layer. The capacitor includes the pixel electrode and a second multilayer film overlapping with the pixel electrode, positioned at a predetermined distance from the pixel electrode, and having the same layer structure as the first multilayer film. A channel formation region of the transistor is at least one layer, which is not in contact with the gate insulating film, of the first multilayer film.
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Citations
25 Claims
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1. A display device comprising:
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a transistor comprising; a gate electrode; a first insulating film over the gate electrode; a first oxide film over the first insulating film; a second oxide film over the first oxide film; a third oxide film over the second oxide film; and a first conductive film over the third oxide film; a second insulating film over the first conductive film and the third oxide film; a second conductive film over the second insulating film; and a connection portion comprising; the first insulating film; a third conductive film over the first insulating film; the second insulating film over the third conductive film; and a fourth conductive film over the second insulating film, wherein the second conductive film is electrically connected to the first conductive film through a first opening provided in the second insulating film, wherein the fourth conductive film is electrically connected to the third conductive film through a second opening provided in the second insulating film, wherein the first conductive film comprises the same material as the third conductive film, wherein the second conductive film comprises the same material as the fourth conductive film, wherein an atomic ratio of components in the first oxide film is different from an atomic ratio of components in the second oxide film, and wherein an atomic ratio of components in the third oxide film is different from the atomic ratio of components in the second oxide film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A display device comprising:
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a transistor comprising; a gate electrode; a first insulating film over the gate electrode; a first oxide film over the first insulating film; a second oxide film over the first oxide film; a third oxide film over the second oxide film; and a first conductive film over the third oxide film; a second insulating film over the first conductive film and the third oxide film; a second conductive film over the second insulating film; and a connection portion comprising; the first insulating film; a third conductive film over the first insulating film; the second insulating film over the third conductive film; and a fourth conductive film over the second insulating film, wherein the second conductive film is electrically connected to the first conductive film through a first opening provided in the second insulating film, wherein the fourth conductive film is electrically connected to the third conductive film through a second opening and a third opening provided in the second insulating film, wherein the first conductive film comprises the same material as the third conductive film, wherein the second conductive film comprises the same material as the fourth conductive film, wherein an atomic ratio of components in the first oxide film is different from an atomic ratio of components in the second oxide film, and wherein an atomic ratio of components in the third oxide film is different from the atomic ratio of components in the second oxide film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A display device comprising:
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a transistor comprising; a gate electrode; a first insulating film over the gate electrode; a first oxide film over the first insulating film; a second oxide film over the first oxide film; and a first conductive film over the second oxide film; a second insulating film over the first conductive film and the second oxide film; a second conductive film over the second insulating film; and a connection portion comprising; the first insulating film; a third conductive film over the first insulating film; the second insulating film over the third conductive film; and a fourth conductive film over the second insulating film, wherein the second conductive film is electrically connected to the first conductive film through a first opening provided in the second insulating film, wherein the fourth conductive film is electrically connected to the third conductive film through a second opening provided in the second insulating film, wherein the first conductive film comprises the same material as the third conductive film, wherein the second conductive film comprises the same material as the fourth conductive film, and wherein an atomic ratio of components in the first oxide film is different from an atomic ratio of components in the second oxide film. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei
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Primary Examiner(s)HO, TU TU V
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Application NumberUS15/175,066Publication NumberTime in Patent Office406 DaysField of Search257 43US Class CurrentCPC Class CodesH01L 27/1225 with semiconductor material...H01L 27/1255 integrated with passive dev...H01L 29/7869 having a semiconductor body...H10K 59/1201 Manufacture or treatmentH10K 59/1213 the pixel elements being TFTsH10K 59/1216 the pixel elements being ca...
