Semiconductor element, method for manufacturing same, and semiconductor integrated circuit

• US 9,711,597 B2
• Filed: 07/30/2014
• Issued: 07/18/2017
• Est. Priority Date: 09/04/2013
• Status: Active Grant

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Inventors: Mori, Takahiro
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US14/915,546
• Publication Number:
  US 20160211325A1
• Time in Patent Office: 1,084 Days
• Field of Search: 257 9
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 29/1033 with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838
• CPC Class Codes: H01L 29/161 including two or more of the elements provided for in group H01L29/16 , e.g. alloys H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/47 Schottky barrier electrodes H01L29/435 takes precedence
• CPC Class Codes: H01L 29/66356 Gated diodes, e.g. field controlled diodes [FCD], static induction thyristors [SITh], field controlled thyristors [FCTh]
• CPC Class Codes: H01L 29/66568 Lateral single gate silicon transistors
• CPC Class Codes: H01L 29/7391 Gated diode structures
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

The present invention provides a semiconductor element that can be manufactured easily at a low cost, can obtain a high tunneling current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit including the semiconductor element. The semiconductor element of the present invention is characterized in that the whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor containing isoelectronic-trap-forming impurities.

Claims

1. A semiconductor element, comprising:

a tunnel junction, wherein a whole or a part of the tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor that comprises isoelectronic-trap-forming impurities.

2. The semiconductor element according to claim 1, wherein the indirect-transition semiconductor is silicon, germanium, or a mixed crystal of silicon and germanium.

3. The semiconductor element according to claim 2, wherein the indirect-transition semiconductor is silicon, and the isoelectronic-trap-forming impurities are Al and N.

4. The semiconductor element according to claim 1, wherein the tunnel junction is constituted by a PN junction.

5. The semiconductor element according to claim 1, wherein the tunnel junction is constituted by a Schottky junction.

6. The semiconductor element according to claim 1, wherein the semiconductor element comprises an element structure of a tunneling field-effect transistor in which a whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor that comprises isoelectronic-trap-forming impurities.

7. A method for manufacturing a semiconductor element, comprising:

forming a semiconductor region made of an indirect-transition semiconductor into which isoelectronic-trap-forming impurities are incorporated, such that the semiconductor region constitutes a whole or a part of a tunnel junction of the semiconductor element.

9. The method for manufacturing the semiconductor element according to claim 7, wherein the indirect-transition semiconductor is silicon, germanium, or a mixed crystal of silicon and germanium.

10. The method for manufacturing the semiconductor element according to claim 7, wherein the indirect-transition semiconductor is silicon, and the isoelectronic-trap-forming impurities are Al and N.

11. The method for manufacturing the semiconductor element according to claim 7, wherein the tunnel junction is constituted by a PN junction.

12. The method for manufacturing the semiconductor element according to claim 7, wherein the tunnel junction is constituted by a Schottky junction.

13. The method for manufacturing the semiconductor element according to claim 7, wherein the semiconductor element comprises an element structure of a tunneling field-effect transistor in which a whole or a part of a tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor that comprises isoelectronic-trap-forming impurities.

8. A semiconductor integrated circuit, comprising:

a semiconductor element that comprises a tunnel junction, wherein a whole or a part of the tunnel junction is constituted by a semiconductor region made of an indirect-transition semiconductor that comprises isoelectronic-trap-forming impurities.