Oxide semiconductor film and semiconductor device

• US 9,711,655 B2
• Filed: 04/25/2016
• Issued: 07/18/2017
• Est. Priority Date: 12/03/2010
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Tsubuku, Masashi, Akimoto, Kengo, Nonaka, Yusuke, Omata, Takatsugu, Honda, Tatsuya, Miyanaga, Akiharu, Ohara, Hiroki, Takahashi, Masahiro
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US15/137,613
• Publication Number:
  US 20160240694A1
• Time in Patent Office: 449 Days
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/1033 with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838
• CPC Class Codes: H01L 29/247 Amorphous materials
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A semiconductor device comprising a first metal oxide film, an oxide semiconductor film, a second metal oxide film, a gate insulating film, and a gate electrode is provided. The oxide semiconductor film comprises an In—Ga—Zn—O-based metal oxide. The second metal oxide film comprises a Ga—Zn—O-based metal oxide. An amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—Zn—O-based metal oxide.

Claims

1. A semiconductor device comprising:

a first metal oxide film;

an oxide semiconductor film over the first metal oxide film;

a second metal oxide film over the oxide semiconductor film;

a gate insulating film over the second metal oxide film; and

a gate electrode over the gate insulating film,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O-based metal oxide,

wherein the second metal oxide film comprises a Ga—

Zn—

O-based metal oxide, and

wherein an amount of substance of zinc oxide with respect to gallium oxide is lower than 50% in the Ga—

Zn—

O-based metal oxide.

2. The semiconductor device according to claim 1, wherein the Ga—

Zn—

O-based metal oxide comprises zinc oxide and gallium oxide.

3. The semiconductor device according to claim 1, wherein an energy gap of the second metal oxide film is larger than an energy gap of the oxide semiconductor film.

4. The semiconductor device according to claim 1, wherein an energy difference between a bottom of a conduction band of the second metal oxide film and a bottom of a conduction band of the oxide semiconductor film is greater than or equal to 0.5 eV.

5. The semiconductor device according to claim 1, wherein an energy difference between a top of a valence band of the second metal oxide film and a top of a valence band of the oxide semiconductor film is greater than or equal to 0.5 eV.

6. The semiconductor device according to claim 1, wherein the first metal oxide film comprises the Ga—

Zn—

O-based metal oxide.

7. The semiconductor device according to claim 1, wherein the first metal oxide film is in direct contact with the second metal oxide film.

8. The semiconductor device according to claim 1, further comprising a source electrode and a drain electrode,

wherein the source electrode is provided between the oxide semiconductor film and the second metal oxide film, and

wherein the drain electrode is provided between the oxide semiconductor film and the second metal oxide film.

9. A semiconductor device comprising:

a first metal oxide film;

an oxide semiconductor film over the first metal oxide film;

a second metal oxide film over the oxide semiconductor film;

a gate insulating film over the second metal oxide film; and

a gate electrode over the gate insulating film,

wherein the oxide semiconductor film comprises an In—

Ga—

Zn—

O-based metal oxide,

wherein the second metal oxide film comprises a Ga—

Zn—

O-based metal oxide, and

wherein an amount of substance of zinc oxide with respect to gallium oxide is lower than 25% in the Ga—

Zn—

O-based metal oxide.

10. The semiconductor device according to claim 9, wherein the Ga—

Zn—

O-based metal oxide comprises zinc oxide and gallium oxide.

11. The semiconductor device according to claim 9, wherein an energy gap of the second metal oxide film is larger than an energy gap of the oxide semiconductor film.

12. The semiconductor device according to claim 9, wherein an energy difference between a bottom of a conduction band of the second metal oxide film and a bottom of a conduction band of the oxide semiconductor film is greater than or equal to 0.5 eV.

13. The semiconductor device according to claim 9, wherein an energy difference between a top of a valence band of the second metal oxide film and a top of a valence band of the oxide semiconductor film is greater than or equal to 0.5 eV.

14. The semiconductor device according to claim 9, wherein the first metal oxide film comprises the Ga—

Zn—

O-based metal oxide.

15. The semiconductor device according to claim 9, wherein the first metal oxide film is in direct contact with the second metal oxide film.

16. The semiconductor device according to claim 9, further comprising a source electrode and a drain electrode,

wherein the source electrode is provided between the oxide semiconductor film and the second metal oxide film, and

wherein the drain electrode is provided between the oxide semiconductor film and the second metal oxide film.