Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element
First Claim
1. A method of growing a nitride semiconductor on a sapphire substrate, the method comprising:
- providing the sapphire substrate, which comprises a principal surface that includes a plurality of projections that are spaced apart from one another, wherein an entirety of an outer surface of each projection consists essentially of no more than three curved surfaces that extend from a location proximate a bottom perimeter of the projection to a pointed top of the projection;
growing the nitride semiconductor on the principal surface such that growth of the nitride semiconductor on the outer surfaces of the projections is suppressed relative to growth of the nitride semiconductor on a crystal growth surface that is located between the projections.
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Abstract
A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element. The projections have a substantially triangular pyramidal-shape the projections having a plurality of side surfaces and a pointed top. The side surfaces have an inclination angle of between 53° and 59° from a bottom of the projections. The side surfaces are crystal-growth-suppressed surfaces on which a growth of the nitride semiconductor is suppressed relative to a portion of the principal surface located between adjacent projections. A bottom of the projections has a substantially triangular shape having three outwardly curved arc-shaped sides, and each of the side surfaces has a substantially triangular shape having vertexes located at the top of the projection and at both ends of a respective side of the bottom of the projection.
32 Citations
19 Claims
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1. A method of growing a nitride semiconductor on a sapphire substrate, the method comprising:
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providing the sapphire substrate, which comprises a principal surface that includes a plurality of projections that are spaced apart from one another, wherein an entirety of an outer surface of each projection consists essentially of no more than three curved surfaces that extend from a location proximate a bottom perimeter of the projection to a pointed top of the projection; growing the nitride semiconductor on the principal surface such that growth of the nitride semiconductor on the outer surfaces of the projections is suppressed relative to growth of the nitride semiconductor on a crystal growth surface that is located between the projections. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification