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Apparatus and method for treatment of in-stent restenosis

  • US 9,713,730 B2
  • Filed: 10/04/2012
  • Issued: 07/25/2017
  • Est. Priority Date: 09/10/2004
  • Status: Active Grant
First Claim
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1. A system for delivering energy-based treatment for in-stent restenosis and other stenosis of the vasculature, the system comprising:

  • an elongate flexible catheter body having a proximal end and a distal end with an axis therebetween;

    a radially expandable structure near the distal end of the catheter body;

    a plurality of electrodes positioned on the radially expandable structure so as to engage tissue upon expansion of the radially expandable structure, wherein the plurality of electrodes are included in one or more flex circuits, wherein the one or more flex circuits further comprise a temperature sensing structure mounted thereon adjacent to at least one of the electrodes;

    a power source coupled with the electrodes such that when an electrode engages tissue an electrical circuit comprising the power source, the electrode, and the engaged tissue is defined; and

    ,a processor coupled with the power source and the temperature sensing structure, the processor configured to verify the presence of the electrical circuit, to selectively energize the engaged electrodes, and to control the delivery of energy by regulating one or more parameters of the electrical circuit based on monitoring feedback from the electrical circuit and the temperature sensing structure such that energy delivered to a tissue treatment zone heats tissue therein to a surface temperature of about 55°

    C. to about 75°

    C. while tissue collateral to the treatment zone 1 mm from the surface and deeper is heated to less than about 45°

    C., thereby inducing a tissue response that remodels stenosis and avoids a subsequently occluding tissue response caused by thermal damage,wherein the processor is configured to monitor and modify energy delivery to at least one of the plurality of electrodes by the power source in response to a change in at least one of frequency range, impedance magnitude, impedance phase angle, temperature, power, voltage, and current, the change being associated with proximity to a metallic implanted structure.

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