Method for processing a substrate and substrate processing apparatus

• US 9,714,467 B2
• Filed: 02/04/2015
• Issued: 07/25/2017
• Est. Priority Date: 02/10/2014
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Oshimo, Kentaro, Sato, Jun, Murata, Masahiro, Sugano, Tomoko, Kato, Hitoshi, Miura, Shigehiro
• Primary Examiner(s): Henry, Caleb
• Assistant Examiner(s): AMER, MOUNIR S
• Application Number:
  US14/613,656
• Publication Number:
  US 20150225849A1
• Time in Patent Office: 902 Days
• CPC Class Codes: C23C 16/345 Silicon nitride
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45538 Plasma being used continuously during the ALD cycle
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/507 using external electrodes, e.g. in tunnel type reactors
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Abstract

A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

Claims

1. A method for processing a substrate using a substrate processing apparatus, the apparatus including:

a vacuum chamber;

a turntable having a substrate receiving portion formed in a surface thereof to receive a substrate thereon provided in the vacuum chamber;

a process gas supply unit configured to supply a process gas that adsorbs on a surface of the substrate;

a first plasma processing gas supply unit configured to supply a first plasma processing gas to the surface of the substrate;

a second plasma processing gas supply unit configured to supply a second plasma processing gas to the surface of the substrate;

a first separation gas supply unit configured to supply a separation gas for separating the first plasma processing gas from the process gas to the surface of the substrate;

a second separation gas supply unit configured to supply the separation gas for separating the second plasma processing gas from the process gas to the surface of the substrate;

a first plasma generation unit configured to convert the first plasma processing gas to first plasma; and

a second plasma generation unit configured to convert the second plasma processing gas to second plasma,

wherein the process gas supply unit, the first separation gas supply unit, the first plasma processing gas supply unit, the second plasma processing gas supply unit and the second separation gas supply unit are arranged in a rotational direction of the turntable in this order,

the method comprising steps of;

supplying the process gas to the surface of the substrate;

supplying the separation gas to the surface of the substrate;

supplying the first plasma processing gas to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance;

supplying the second plasma processing gas to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance; and

supplying the separation gas to the surface of the substrate.

2. The method as claimed in claim 1, wherein the first distance is set in a first range from 45 to 120 mm, and

the second distance is set in a second range from 20 to 60 mm.

3. The method as claimed in claim 1, wherein the process gas contains at least one of diisopropylamino-silane, tris(dimethylamino)silane, bis(tertiary-butyl-amino)silane, dichlorosilane, hexachlorodisilane, titanium tetrachloride, titanium methylpentanedionato bis(tetramethylheptanedionato), trimethylaluminium, tetrakis(ethylmethylamino)zirconium, tetrakis (ethylmethylamino)hafnium, and strontium bis(tetramethylheptanedionato), and

each of the first plasma processing gas and the second plasma processing gas contain at least ammonia gas.