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Method and apparatus for maintaining parallelism of layers and/or achieving desired thicknesses of layers during the electrochemical fabrication of structures

  • US 9,714,473 B2
  • Filed: 02/26/2014
  • Issued: 07/25/2017
  • Est. Priority Date: 12/31/2003
  • Status: Active Grant
First Claim
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1. In a batch fabrication process for forming a plurality of multi-layer three-dimensional structures including:

  • (a) forming and adhering a first multi-material layer to a substrate;

    (b) forming and adhering one or more successive multi-material layers to the first multi-material layer or to a previously formed successive multi-material layer, wherein each multi-material layer comprises planarized patterns of at least one deposited structural material and at least one deposited sacrificial material, and (c) after formation of the plurality of multi-material layers separating the deposited sacrificial material from the deposited structural material to reveal the plurality of multi-layer three-dimensional structures formed from the at least one deposited structural material, wherein the improvement comprises;

    (i) during formation of a given multi-material layer, and after deposition of the at least one deposited structural material and the at least one deposited sacrificial material for the given layer and with one or more measurement pads existing on a surface of the substrate or on a surface of a previously formed multi-material layer, mounting the substrate to a fixture in a fly cutting machine;

    (ii) while the substrate is mounted to the fixture, subjecting the at least one deposited structural material and at least one deposited sacrificial material, but not the one or more measurement pads, to a rotating cutting tool to planarize a surface of the at least one deposited structural material and at least one deposited sacrificial material for the given multi-material layer and to bring the height of the at least one deposited structural material and at least one deposited sacrificial material for the given multi-material layer to a reduced level;

    (iii) after the planarization operation, locating a measurement device in contact with the one or more measurement pads and locating the measurement device in contact with one or more points on at least one of the at least one deposited structural material and at least one deposited sacrificial material for the given layer that were subject to the planarization operation;

    (iv) extracting data from the measurement device concerning a measured height of at least one point relative to a reference point or plane that is based at least in part on the one or more measurement pads;

    (v) comparing the measured height to a target structure height for the given layer; and

    (vi) if the measured height and the target structure height are not within a desired tolerance, repeating operations (ii)-(v) until the measured height and target structure height are with the desired tolerance.

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