Low read data storage management
First Claim
1. A method of managing a storage device that includes non-volatile memory, the method comprising:
- detecting occurrence of a first event;
in response to detecting the occurrence of the first event, writing low read data to the non-volatile memory of the storage device with a fast single-level cell (SLC) programming mode, distinct from a default SLC programming mode, wherein;
low read data is data satisfying predefined low read criteria,writing data with the fast SLC programming mode includes writing data with a density of one data bit per memory cell using one or more memory programming parameters distinct from a default set of memory programming parameters used for writing data with the default SLC programming mode, andwriting data with the fast SLC programming mode takes less time per predefined unit of data than writing data with the default SLC programming mode;
detecting occurrence of a second event; and
in response to detecting the occurrence of the second event, writing data corresponding to the second event to the non-volatile memory of the storage device with the default SLC programming mode, wherein writing data with the default SLC programming mode includes writing data with a density of one data bit per memory cell using the default set of memory programming parameters.
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Accused Products
Abstract
Systems and methods disclosed herein are used to efficiently manage low read data. In one aspect, a method includes, in response to detecting occurrence of a first event (e.g., PFail), writing low read data to non-volatile memory of a storage device with a fast SLC programming mode, distinct from a default SLC programming mode. Writing the low read data with the fast SLC programming mode: (i) includes using one or more memory programming parameters distinct from a default set of memory programming parameters used for writing data with the default SLC programming mode and (ii) takes less time per predefined unit of data than writing data with the default SLC programming mode. The method also includes: in response to detecting occurrence of a second event (e.g., host write command), writing data corresponding to the second event with the default SLC programming mode using the default set of memory programming parameters.
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Citations
19 Claims
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1. A method of managing a storage device that includes non-volatile memory, the method comprising:
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detecting occurrence of a first event; in response to detecting the occurrence of the first event, writing low read data to the non-volatile memory of the storage device with a fast single-level cell (SLC) programming mode, distinct from a default SLC programming mode, wherein; low read data is data satisfying predefined low read criteria, writing data with the fast SLC programming mode includes writing data with a density of one data bit per memory cell using one or more memory programming parameters distinct from a default set of memory programming parameters used for writing data with the default SLC programming mode, and writing data with the fast SLC programming mode takes less time per predefined unit of data than writing data with the default SLC programming mode; detecting occurrence of a second event; and in response to detecting the occurrence of the second event, writing data corresponding to the second event to the non-volatile memory of the storage device with the default SLC programming mode, wherein writing data with the default SLC programming mode includes writing data with a density of one data bit per memory cell using the default set of memory programming parameters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A storage device, comprising:
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non-volatile memory; and a storage controller, the storage controller including one or more controller modules configured to; detect occurrence of a first event; in response to detecting the occurrence of the first event, write low read data to the non-volatile memory of the storage device, wherein low read data is data satisfying predefined low read criteria, wherein; writing the low read data includes writing the low read data to the non-volatile memory of the storage device with a fast single-level cell (SLC) programming mode, distinct from a default SLC programming mode to the non-volatile memory of the storage device, writing data with the fast SLC programming mode includes writing the low read data with a density of one data bit per memory cell using one or more memory programming parameters distinct from a default set of memory programming parameters for writing data to the non-volatile memory of the storage device with the default SLC programming mode, and writing data to the non-volatile memory of the storage device with the fast SLC programming mode takes less time per predefined unit of data than writing data to the non-volatile memory of the storage device with the default SLC programming mode; detect occurrence of a second event; and in response to detecting the occurrence of the second event, write data corresponding to the second event to the non-volatile memory of the storage device with the default SLC programming mode with a density of one data bit per memory cell using the default set of memory programming parameters. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A non-transitory computer-readable storage medium, storing one or more programs configured for execution by one or more processors of a storage device, the one or more programs including instructions that when executed by the one or more processors cause the storage device to:
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detect occurrence of a first event; in response to detecting the occurrence of the first event, write low read data to the non-volatile memory of the storage device, wherein low read data is data satisfying predefined low read criteria, wherein; writing the low read data includes writing the low read data to the non-volatile memory of the storage device with a fast single-level cell (SLC) programming mode, distinct from a default SLC programming mode to the non-volatile memory of the storage device, writing data with the fast SLC programming mode includes writing the low read data with a density of one data bit per memory cell using one or more memory programming parameters distinct from a default set of memory programming parameters for writing data to the non-volatile memory of the storage device with the default SLC programming mode, and writing data to the non-volatile memory of the storage device with the fast SLC programming mode takes less time per predefined unit of data than writing data to the non-volatile memory of the storage device with the default SLC programming mode; detect occurrence of a second event; and in response to detecting the occurrence of the second event, write data corresponding to the second event to the non-volatile memory of the storage device with the default SLC programming mode with a density of one data bit per memory cell using the default set of memory programming parameters. - View Dependent Claims (19)
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Specification