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Semiconductor devices with enhanced deterministic doping and related methods

  • US 9,716,147 B2
  • Filed: 06/09/2015
  • Issued: 07/25/2017
  • Est. Priority Date: 06/09/2014
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device comprising:

  • forming a plurality of stacked groups of layers on a semiconductor substrate, each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions;

    implanting a dopant in the semiconductor substrate beneath the plurality of stacked groups of layers in at least one localized region; and

    performing a rapid thermal anneal of the plurality of stacked groups of layers and semiconductor substrate and with the plurality of stacked groups of layers vertically and horizontally constraining the dopant in the at least one localized region.

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