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Gate structure having designed profile and method for forming the same

  • US 9,716,161 B2
  • Filed: 10/01/2014
  • Issued: 07/25/2017
  • Est. Priority Date: 10/01/2014
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor structure, comprising:

  • forming a polysilicon layer over a substrate;

    forming a hard mask structure over the polysilicon layer;

    etching the polysilicon layer to form a dummy gate structure below the hard mask structure;

    forming spacers over sidewalls of the dummy gate structure; and

    replacing the dummy gate structure by a metal gate structure,wherein the dummy gate structure has a top width, a neck width, and a bottom width, and the neck width is larger than both the top width and the bottom width.

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