Gate structure having designed profile and method for forming the same
First Claim
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1. A method for forming a semiconductor structure, comprising:
- forming a polysilicon layer over a substrate;
forming a hard mask structure over the polysilicon layer;
etching the polysilicon layer to form a dummy gate structure below the hard mask structure;
forming spacers over sidewalls of the dummy gate structure; and
replacing the dummy gate structure by a metal gate structure,wherein the dummy gate structure has a top width, a neck width, and a bottom width, and the neck width is larger than both the top width and the bottom width.
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Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a metal gate structure having curved sidewalls formed over a substrate. The semiconductor structure further includes spacers formed on the curved sidewalls of the metal gate structure. In addition, each curved sidewall of the metal gate structure has a top portion, a middle portion, and a bottom portion, and an angle between the middle portion and the bottom portion of the curved sidewall of the metal gate structure is smaller than 180° C.
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Citations
20 Claims
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1. A method for forming a semiconductor structure, comprising:
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forming a polysilicon layer over a substrate; forming a hard mask structure over the polysilicon layer; etching the polysilicon layer to form a dummy gate structure below the hard mask structure; forming spacers over sidewalls of the dummy gate structure; and replacing the dummy gate structure by a metal gate structure, wherein the dummy gate structure has a top width, a neck width, and a bottom width, and the neck width is larger than both the top width and the bottom width. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a semiconductor structure, comprising:
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forming a dummy gate layer over a substrate; patterning a top portion of the dummy gate layer to form an upper portion of a dummy gate structure by performing a first etching process; and patterning a bottom portion of the dummy gate layer to form a bottom portion of the dummy gate structure by performing a second etching process, wherein the first etching process is different from the second etching process, such that a first inclination of a sidewall of the upper portion is different from a second inclination of a sidewall of the bottom portion. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for forming a semiconductor structure, comprising:
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forming a dummy gate layer over a substrate; patterning the dummy gate layer to form a dummy gate structure having an upper portion and a bottom portion such that a first inclination of a sidewall of the upper portion of the dummy gate structure is smaller than a second inclination of a sidewall of the bottom portion of the dummy gate structure; and replacing the dummy gate structure by a metal gate structure, wherein an angle between the first inclination and the second inclination measured from an inner side of the dummy gate structure is smaller than 180°
. - View Dependent Claims (17, 18, 19, 20)
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Specification