Transistor structure with improved unclamped inductive switching immunity
First Claim
1. A method of fabricating a semiconductor device, said method comprising:
- growing an epitaxial layer over a doped substrate layer, said epitaxial layer and said doped substrate layer both of a first conductivity type, said epitaxial layer comprising a source region and a drain region that are both of a second conductivity type, said epitaxial layer further comprising a body structure of said first conductivity type;
forming a gate structure above said epitaxial layer;
forming an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate layer and said source region; and
forming a first tub region of said first conductivity type under said source region, and adjacent laterally to and in contact with said body structure, wherein said first tub region is in contact with said trench-like feed-through element.
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Accused Products
Abstract
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element.
121 Citations
20 Claims
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1. A method of fabricating a semiconductor device, said method comprising:
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growing an epitaxial layer over a doped substrate layer, said epitaxial layer and said doped substrate layer both of a first conductivity type, said epitaxial layer comprising a source region and a drain region that are both of a second conductivity type, said epitaxial layer further comprising a body structure of said first conductivity type; forming a gate structure above said epitaxial layer; forming an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate layer and said source region; and forming a first tub region of said first conductivity type under said source region, and adjacent laterally to and in contact with said body structure, wherein said first tub region is in contact with said trench-like feed-through element. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of fabricating a semiconductor transistor structure, said method comprising:
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forming an epitaxial layer adjacent to a substrate of a first conductivity type; forming a gate structure located above said epitaxial layer, forming a drain region of a second conductivity type within said epitaxial layer; forming a source region of said second conductivity type within said epitaxial layer; forming a body structure of said first conductivity type within said epitaxial layer and at least partially under said gate structure and extending laterally under said source region; forming an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said substrate and passes through and contacts said source region; and forming a first tub region of said first conductivity type under said source region and adjacent laterally to and in contact with said body structure and in contact with said trench-like feed-through element. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for fabricating a semiconductor transistor structure, said method comprising:
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providing a substrate of a first conductivity type; forming an epitaxial layer adjacent to said substrate, wherein said epitaxial layer comprises said first conductivity type; forming a gate structure located above said epitaxial layer; forming a drain region within said epitaxial layer, wherein said drain region comprises a second conductivity type; forming a source region within said epitaxial layer, wherein said source region comprises said second conductivity type, wherein a channel is formed in said epitaxial layer between said source region and said drain region, wherein said channel is located at least partially below said gate structure; forming a body structure of said first conductivity type within said epitaxial layer, wherein said body structure is at least partially formed under said gate structure and extends laterally under said source region; forming a tub region under said source region and adjacent laterally to and in contact with said body structure, wherein said tub region comprises said first conductivity type; and forming an electrically conductive trench-like feed-through element that passes through said epitaxial layer and contacts said first conductivity type substrate and passes through and contacts said second conductivity type source region; and
passes through and contacts said tub region of said first conductivity type formed under said source region, and adjacent laterally to and in contact with said body structure. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification