Trench DMOS transistor with reduced gate-to-drain capacitance

• US 9,716,167 B2
• Filed: 02/22/2011
• Issued: 07/25/2017
• Est. Priority Date: 02/22/2011
• Status: Active Grant

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Leng, Yaojian, Foote, Jr., Richard Wendell, Adler, Steven J.
• Primary Examiner(s): Payen, Marvin
• Assistant Examiner(s): Webb, Vernon P
• Application Number:
  US13/032,405
• Publication Number:
  US 20120211826A1
• Time in Patent Office: 2,345 Days
• Field of Search: 257288, 257312, 257314, 257328, 257330, 257E2114, 257E29262, 438197, 438270
• CPC Class Codes: H01L 29/0623 Buried supplementary region, e.g. buried guard ring multi-RESURF H01L29/0634
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench DMOS transistor with a very low on-state drain-to-source resistance and a high gate-to-drain charge includes one or more floating islands that lie between the gate and drain to reduce the charge coupling between the gate and drain, and effectively lower the gate-to-drain capacitance.

Claims

1. A trench DMOS structure comprising:

a semiconductor structure having;

a drain region of a first conductivity type, having a bottom surface;

a body region of a second conductivity type that touches the drain region;

an opening that extends through the body region into the drain region, the opening having a bottom surface and a side wall surface;

a source region of the first conductivity type that touches the body region and the side wall surface of the opening, the drain region and the source region being spaced apart and vertically separated by the body region along the side wall surface;

a gate oxide layer within the opening, the gate oxide touching the drain region, the source region and the body region to line the side wall surface of the opening;

a gate that touches the gate oxide layer, the gate being conductive and lying within the opening;

a first island of the second conductivity type formed within the drain region that lies directly vertically between and spaced apart from the bottom surface of the drain region and the gate; and

a first doped region of the second conductivity type that touches and completely surrounds the first island, the drain region touching and completely surrounding the first doped region including between the first doped region and the opening.

2. The trench DMOS structure of claim 1, further comprising an insulation region that touches and covers the bottom of the opening and touches and lies below the gate.

3. The trench DMOS structure of claim 1, further comprising:

a second island of the second conductivity type formed within the drain region that lies between and spaced apart from the bottom surface of the drain region and the first island, the first and second islands being vertically aligned; and

a second doped region of the second conductivity type that touches and completely surrounds the second island, the drain region touching and completely surrounding the second doped region.

4. The trench DMOS structure of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.

5. A trench DMOS structure comprising:

an n-type drain region having a bottom surface disposed in a semiconductor structure;

a p-type body region that touches the n-type drain region;

a trench that extends through the p-type body region into the n-type drain region, the trench having a bottom surface and a side wall surface;

an n-type source region that touches the p-type body region and the side wall surface of the trench, the n-type drain region and the n-type source region being spaced apart and vertically separated by the p-type body region along the side wall surface;

a gate within the trench;

a gate oxide layer within the trench, the gate oxide laterally separating the gate from the n-type drain region, the n-type source region and the p-type body region to line the side wall surface of the trench;

a first island of p-type material formed within the n-type drain region that lies directly vertically between and spaced apart from the bottom surface of the n-type drain region and the gate; and

a first p-type region that touches and completely surrounds the first island, the drain region touching and completely surrounding the first p-type region including between the first p-type region and the trench.

6. The trench DMOS structure of claim 5, further comprising an insulation region that touches and covers the bottom of the trench and touches and lies below the gate.

7. The trench DMOS structure of claim 5, further comprising:

a second island of p-type material formed within the n-type drain region that lies between and spaced apart from the bottom surface of the n-type drain region and the first island, the first and second islands being vertically aligned; and

a second p-type region that touches and completely surrounds the second island, the n-type drain region touching and completely surrounding the second p-type region.

8. The trench DMOS structure of claim 5, wherein a distance from a top of the first p-type region to the bottom surface of the trench is less than a width of the trench.

9. The trench DMOS structure of claim 5, further comprising:

a buried n-type region connected to the bottom surface of the n-type drain region; and

a sinker region that extends from a top surface of the semiconductor structure to the buried region, wherein the sinker region is n-type.

10. The trench DMOS structure of claim 9, further comprising:

a first metal contact that extends through an isolation structure to contact the gate;

a second metal contact that extends through the isolation structure to contact the n-type source region; and

a third metal contact that extends through the isolation structure to contact the sinker region.

11. A trench DMOS structure comprising:

a semiconductor structure having;

an n-type drain region having a bottom surface;

a p-type body region that touches the drain region;

a trench that extends through the body region into the drain region, the trench having a bottom surface and a side wall surface;

an n-type source region that touches the body region and the side wall surface of the trench, the drain region and the source region being spaced apart and vertically separated by the body region along the side wall surface;

a gate within the trench;

a gate oxide layer within the trench, the gate oxide laterally separating the gate from the n-type drain region, the n-type source region and the p-type body region to line the side wall surface of the trench; and

a first island of p-type material formed within the n-type drain region that lies directly vertically between and spaced apart from the bottom surface of the n-type drain region and the gate, wherein a portion of the n-type drain region is located between the first island and the trench, and wherein the first island is located below a center of the trench.

12. The trench DMOS structure of claim 11, further comprising an insulation region that touches and covers the bottom of the trench and touches and lies below the gate.

13. The trench DMOS structure of claim 11, further comprising a second island of p-type material formed within the n-type drain region that lies between and spaced apart from the bottom surface of the n-type drain region and the first island, the first and second islands being vertically aligned.

14. The trench DMOS structure of claim 11, further comprising:

a buried n-type region connected to the bottom surface of the n-type drain region; and

a sinker region that extends from a top surface of the semiconductor structure to the buried region, wherein the sinker region is n-type.

15. The trench DMOS structure of claim 14, further comprising:

a first metal contact that extends through an isolation structure to contact the gate;

a second metal contact that extends through the isolation structure to contact the n-type source region; and

a third metal contact that extends through the isolation structure to contact the sinker region.