Light emitting diode and method of fabricating the same
DCFirst Claim
1. A light emitting diode, comprising:
- an n-type contact layer;
a p-type contact layer disposed over the n-type contact layer;
an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In) and a barrier layer;
a superlattice layer including a plurality of layers, disposed near the active region; and
a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer.
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Accused Products
Abstract
Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.
18 Citations
22 Claims
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1. A light emitting diode, comprising:
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an n-type contact layer; a p-type contact layer disposed over the n-type contact layer; an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In) and a barrier layer; a superlattice layer including a plurality of layers, disposed near the active region; and a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer. - View Dependent Claims (2, 3, 4, 5)
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6. A light emitting diode, comprising:
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an n-type contact layer; a p-type contact layer disposed over the n-type contact layer; an active region disposed between the n-type contact layer and the p-type contact layer and comprising a multi-quantum well structure including a quantum well layer that includes a composition ratio of Indium (In); a superlattice layer including a plurality of layers, disposed near the active region; and a spacer layer including a plurality of layers disposed between the superlattice layer and the n-type contact layer and having a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer, and wherein the plurality of layers in the spacer layer includes a first layer doped with n-type impurities and positioned adjacent to the active region, and a second layer comprising In at a composition ratio that is lower than the In composition ratio within the quantum well layer, wherein the n-type contact layer includes n-type impurities and the n-type impurities of the first layer is higher than a concentration of the n-type impurities in the n-type contact layer, wherein the light emitting diode, further comprises; an intermediate layer disposed between the n-type contact layer and the spacer layer and including n-type impurities, wherein a concentration of the n-type impurities in the intermediate layer is higher than the concentration of the n-type impurities in the n-type contact layer and lower than the concentration of the n-type impurities in the spacer layer. - View Dependent Claims (7, 8)
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9. A light emitting diode, comprising:
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an n-type contact layer doped with n-type impurities; a spacer layer disposed over the n-type contact layer and including a stack structure including a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is closer to the n-type contact layer than the second semiconductor layer; an active region disposed over the spacer layer and having a multi-quantum well structure including a quantum well layer and a barrier layer; and a p-type contact layer disposed over the active region; wherein the first and second semiconductor layers of the spacer layer have respective Indium (In) composition ratios and the In composition ratio of the first semiconductor layer is lower than the In composition ration of the second semiconductor layer and wherein the spacer layer has a bandgap smaller than that of the barrier layer and greater than that of the quantum well layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification