Thin capping for MEMS devices

• US 9,718,674 B2
• Filed: 08/26/2014
• Issued: 08/01/2017
• Est. Priority Date: 08/26/2013
• Status: Active Grant

• Current Assignee: Silex Microsystems AB (Sai Microelectronics, Inc.)
• Original Assignee: Silex Microsystems AB (Sai Microelectronics, Inc.)
• Inventors: Kalvesten, Edvard, Ebefors, Thorbjorn, Svedin, Niklas
• Primary Examiner(s): TAYLOR, EARL N
• Application Number:
  US14/914,015
• Publication Number:
  US 20160207758A1
• Time in Patent Office: 1,071 Days
• CPC Class Codes: B81B 2201/01 Switches
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2201/0271 Resonators; ultrasonic resonators
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2201/0153 Imprinting techniques not provided for in B81C2201/0152
• CPC Class Codes: B81C 2201/036 Hot embossing
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: H01L 21/50 Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
• CPC Class Codes: H01L 23/08 the material being an electrical insulator, e.g. glass
• CPC Class Codes: H01L 24/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/16235 Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Abstract

A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

Claims

1. A method of making a micro-device with a capping structure, comprising:

providing a base substrate on which there is a micro-electronic and/or micro-mechanic component attached or integrated;

providing a cap substrate of a glass material that exhibits a glass transition when heated towards the liquid state, selected from the group consisting of borofloat glasses, quartz, metallic alloys, AlO_x, and polymers;

making micro-depressions in said cap substrate to a predetermined depth;

metallizing only walls of the micro-depressions in the cap substrate;

providing an electrical connection through the cap substrate by thinning the cap substrate on an opposite side from where the micro-depressions are made and exposing the metal in the micro-depressions;

stopping the thinning before the metal is exposed;

making openings to expose the metal;

metallizing the openings to provide contact and to hermetically seal the electrical connection; and

bonding together the base substrate and the cap substrate, such that there is an electrical contact between the component on the base substrate and the metallized micro-depressions in the cap substrate.

2. The method according to claim 1, wherein the base substrate is bonded to the cap substrate on a side of the cap substrate where the micro-depressions are made, after the metallization of the micro-depressions, but before the electrical connection through the cap substrate is made.

3. The method according to claim 1, wherein the base substrate is bonded to the cap substrate on the side opposite from where the micro-depressions are made, after the metallization of the micro-depressions, and after the electrical connection through the cap substrate is made.

7. The method according to claim 1, wherein the base substrate, the cap substrate or both are provided with a depression that forms a cavity which accommodates the component when the substrates are bonded together.

8. The method according to claim 1, wherein the cap substrate before bonding to the carrier and before making the vias is provided with depressions for accommodating metal contacts, and wherein such metal contacts are selectively deposited on the bottom of said depression.

9. The method according to claim 8, further comprising masking the glass wafer cap substrate and etching to provide depressions;

masking and electroplating the bottoms of the depressions to provide the desired metal contacts;

bonding the glass wafer to a carrier wafer, and thinning down the glass.

4. A method of making a micro-device with a capping structure, comprising:

providing a base substrate on which there is a micro-electronic and/or micro-mechanic component attached or integrated;

providing a cap substrate of a glass material that exhibits a glass transition when heated towards the liquid state, selected from the group consisting of borofloat glasses, quartz, metallic alloys, AlO_x, and polymers;

making micro-depressions in said cap substrate to a predetermined depth by stamping or pressing a plurality of needles protruding from a support substrate, into the cap substrate under heating and pressure;

metallizing only walls of the micro-depressions in the cap substrate;

providing an electrical connection through the cap substrate; and

bonding together the base substrate and the cap substrate, such that there is an electrical contact between the component on the base substrate and the metallized micro-depressions in the cap substrate.

5. The method according to claim 4, wherein the needles are removed together with the support substrate immediately after the depressions are made so as to leave holes in the cap substrate.

6. The method according to claim 4, wherein the needles are left in the cap substrate after the depressions and only the support substrate is removed so as to leave metal filled holes in the cap substrate material.

10. A method of making a micro-device with a capping structure, comprising:

providing a base substrate on which there is a microelectronic and/or micro-mechanic component attached or integrated;

providing a cap substrate of a glass material, a non-crystalline or amorphous material and that exhibits a glass transition when heated towards the liquid state, selected from the group consisting of borofloat glasses, quartz, metallic alloys, AlOx, and polymers;

making micro-depressions in said cap substrate to a predetermined depth by stamping or pressing a plurality of needles protruding from a support substrate, into the cap substrate under heating and pressure;

wherein the needles are left in the cap substrate after the depressions and only the support substrate is removed so as to leave metal filled holes in the cap substrate material;

providing electrical connection through the cap substrate; and

bonding together the base substrate and the cap substrate, such that there is an electrical contact between the component on the base substrate and the metallized depressions in the cap substrate.