Semiconductor device having a stacked metal oxide
First Claim
1. A semiconductor device comprising:
- a first insulator over a substrate;
a first metal oxide over the first insulator;
a second metal oxide over the first metal oxide;
a first conductor and a second conductor over the second metal oxide;
a third metal oxide over the second metal oxide, the first conductor, and the second conductor;
a second insulator over the third metal oxide; and
a third conductor over the second insulator,wherein the second metal oxide includes a region in contact with a top surface of the first metal oxide and regions in contact with side surfaces of the first metal oxide, andwherein the second metal oxide includes channel formation regions.
1 Assignment
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Accused Products
Abstract
To provide a transistor with favorable electrical characteristics. A semiconductor device includes a first insulator over a substrate; a first metal oxide over the first insulator; a second metal oxide over the first metal oxide; a first conductor and a second conductor over the second metal oxide; a third metal oxide over the second metal oxide, the first conductor, and the second conductor; a second insulator over the third metal oxide; and a third conductor over the second insulator. The second metal oxide includes a region in contact with a top surface of the first metal oxide and regions in contact with side surfaces of the first metal oxide. The second metal oxide includes channel formation regions.
126 Citations
5 Claims
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1. A semiconductor device comprising:
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a first insulator over a substrate; a first metal oxide over the first insulator; a second metal oxide over the first metal oxide; a first conductor and a second conductor over the second metal oxide; a third metal oxide over the second metal oxide, the first conductor, and the second conductor; a second insulator over the third metal oxide; and a third conductor over the second insulator, wherein the second metal oxide includes a region in contact with a top surface of the first metal oxide and regions in contact with side surfaces of the first metal oxide, and wherein the second metal oxide includes channel formation regions. - View Dependent Claims (2, 3, 4, 5)
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Specification