Method for transferring semiconductor structure
First Claim
1. A method for transferring at least one semiconductor structure, the method comprising:
- coating an adhesive layer onto a carrier substrate;
disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto, wherein the adhesive layer comprises at least one adhesive component and at least one surfactant component at least after the disposing;
irradiating at least one electromagnetic wave to the adhesive layer at least through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position on the adhesive layer, wherein the semiconductor structure has an optical rejection band in between ultraviolet to infrared or is completely opaque, the carrier substrate has an pass band in between ultraviolet to infrared, and the pass band of the carrier substrate and the rejection band of the semiconductor structure at least partially overlap;
actuating a transfer head to pick up the semiconductor structure from the adhesive layer after the adhesion pressure of the adhesive layer is reduced; and
releasing the semiconductor structure from the transfer head onto a receiving substrate structure.
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Accused Products
Abstract
A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure, in which the adhesive layer includes an adhesive component and a surfactant component therein after the disposing; irradiating the electromagnetic wave to the adhesive layer through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position, in which the semiconductor structure has a rejection band or is completely opaque, the carrier substrate has a pass band, and the pass band of the carrier substrate and the rejection band of the semiconductor structure overlaps; and transferring the semiconductor structure from the adhesive layer to a receiving substrate structure after the adhesion pressure of the adhesive layer is reduced.
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Citations
17 Claims
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1. A method for transferring at least one semiconductor structure, the method comprising:
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coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure thereto, wherein the adhesive layer comprises at least one adhesive component and at least one surfactant component at least after the disposing; irradiating at least one electromagnetic wave to the adhesive layer at least through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position on the adhesive layer, wherein the semiconductor structure has an optical rejection band in between ultraviolet to infrared or is completely opaque, the carrier substrate has an pass band in between ultraviolet to infrared, and the pass band of the carrier substrate and the rejection band of the semiconductor structure at least partially overlap; actuating a transfer head to pick up the semiconductor structure from the adhesive layer after the adhesion pressure of the adhesive layer is reduced; and releasing the semiconductor structure from the transfer head onto a receiving substrate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification