Pixel master-slave photodiode bias control amplifier

• US 9,722,549 B2
• Filed: 04/10/2015
• Issued: 08/01/2017
• Est. Priority Date: 04/10/2015
• Status: Active Grant

• Current Assignee: Sensors Unlimited Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Original Assignee: Sensors Unlimited Inc. (Raytheon Technologies Corporation d/b/a RTX)
• Inventors: Lund, Joshua, Lin, Minlong
• Primary Examiner(s): PYO, KEVIN K
• Application Number:
  US14/684,121
• Publication Number:
  US 20160300872A1
• Time in Patent Office: 844 Days
• Field of Search: 2502081, 250214 R, 250214 A, 250214 LA, 330 59, 330110, 330308
• CPC Class Codes: H03F 3/08 controlled by light
• CPC Class Codes: H04N 25/709 Circuitry for control of the power supply

Abstract

A pixel master-slave photodiode bias control amplifier system is disclosed. The pixel master-slave photodiode bias control amplifier system may include a master pixel and one or more slave pixels. The slave pixel(s) may be connected to a portion of the master pixel. In this manner, components may be shared between/among the master pixel and the slave pixel(s); thus, for example, optimizing the component count of the pixel master-slave photodiode bias control amplifier system and the size occupied by the pixel master-slave photodiode bias control amplifier system.

Claims

1. A pixel master-slave photodiode bias control amplifier system comprising:

a master pixel comprising;

a detector configured to receive an input illumination energy and direct a detector current to an amplification member in response to the input illumination energy; and

an amplifier load member configured to set a load of the amplification member in response to a bias voltage,

the amplification member configured to receive the detector current and direct a first amplification current through an integrator, and

the amplification member comprising a current mirror; and

a first slave pixel connected to the amplification member of the master pixel.

2. The pixel master-slave photodiode bias control amplifier system according to claim 1, wherein the amplification member comprises a Sackinger current mirror.

3. The pixel master-slave photodiode bias control amplifier system according to claim 1, wherein the integrator comprises a gate-modulating current mirror amplifier.

4. The pixel master-slave photodiode bias control amplifier system according to claim 1, wherein the integrator comprises an integrating capacitor circuit.

5. The pixel master-slave photodiode bias control amplifier system according to claim 1, wherein the input illumination energy comprising collimated light.

6. The pixel master-slave photodiode bias control amplifier system according to claim 5, wherein the detector comprises a reverse biased light sensitive diode comprising an anode and a cathode.

7. The pixel master-slave photodiode bias control amplifier system according to claim 1, wherein the first slave pixel comprises:

a slave detector configured to receive the input illumination energy and direct a slave detector current to a slave control transistor in response to the input illumination energy,

the slave control transistor configured to receive the slave detector current and direct a first slave amplification current through a slave integrator,

wherein a gate of the slave control transistor is connected to the amplification member of the master pixel.

8. The pixel master-slave photodiode bias control amplifier system according to claim 7, wherein the slave integrator comprises a gate-modulating current mirror amplifier.

9. The pixel master-slave photodiode bias control amplifier system according to claim 7, wherein the slave integrator comprises an integrating capacitor circuit.

10. The pixel master-slave photodiode bias control amplifier system according to claim 1, further comprising a second slave pixel and a third slave pixel each connected to the amplification member of the master pixel.

11. A pixel master-slave photodiode bias control amplifier system comprising:

a master pixel comprising a detector configured to receive an input illumination energy and direct a detector current to an amplification member in response to the input illumination energy,

the amplification member configured to receive the detector current and direct a first amplification current through an integrator;

a first slave pixel connected to the amplification member of the master pixel,

wherein the amplification member comprises a Sackinger current mirror,

wherein the master pixel further comprises an amplifier load member configured to set a load of the amplification member in response to a bias voltage, and

wherein the first slave pixel comprises;

a slave detector configured to receive the input illumination energy and direct a slave detector current to a slave control transistor in response to the input illumination energy,

the slave control transistor configured to receive the slave detector current and direct a first slave amplification current through a slave integrator,

wherein a gate of the slave control transistor is connected to the amplification member of the master pixel.

12. The pixel master-slave photodiode bias control amplifier system according to claim 11, wherein the integrator comprises one of:

a gate-modulating current mirror amplifier and an integrating capacitor circuit.

13. The pixel master-slave photodiode bias control amplifier system according to claim 12, wherein the slave integrator comprises one of:

a gate-modulating current mirror amplifier and an integrating capacitor circuit.

14. The pixel master-slave photodiode bias control amplifier system according to claim 11, further comprising a second slave pixel and a third slave pixel each connected to the amplification member of the master pixel.