Apparatus and method for controlled application of reactive vapors to produce thin films and coatings

• US 9,725,805 B2
• Filed: 06/02/2006
• Issued: 08/08/2017
• Est. Priority Date: 06/27/2003
• Status: Active Grant

• Current Assignee: JEFFREY D. CHINN AND ROMUALD NOWAK, SPTS Technologies Limited (KLA Corporation)
• Original Assignee: SPTS Technologies Limited (KLA Corporation)
• Inventors: Kobrin, Boris, Nowak, Romuald, Yi, Richard C., Chinn, Jeffrey D.
• Primary Examiner(s): Lund, Jeffrie R
• Application Number:
  US11/445,706
• Publication Number:
  US 20060213441A1
• Time in Patent Office: 4,085 Days
• Field of Search: 118715, 118726, 4272481
• CPC Class Codes: B05D 1/60 Deposition of organic layers from vapour phase vapour phase deposition in general C23C14/00, C23C16/00
• CPC Class Codes: B05D 3/142 Pretreatment
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: C23C 16/4485 by evaporation without using carrier gas in contact with the source material C23C16/4486 takes precedence
• CPC Class Codes: C23C 16/45557 Pulsed pressure or control pressure
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber

Abstract

A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

Claims

1. An apparatus for vapor deposition of thin film coatings, the apparatus comprising:

a) a process controller;

b) a plurality of precursor containers into which a plurality of coating precursors, each in the form of a liquid or a solid, are respectively placed, where at least one of the coating precursors exhibits a vapor pressure below about 150 Torr at a temperature of 25 degrees Celsius;

c) a plurality of precursor vapor reservoirs, each in communication with a respective one of said precursor containers;

d) a plurality of in-line devices, which control a vapor flow of a coating precursor vapor from one of said precursor containers into one of said precursor vapor reservoirs with which said precursor container is in communication upon receipt of a signal from said process controller;

e) a plurality of precursor vapor reservoir pressure sensors, where each pressure sensor is in communication with one of said plurality of precursor vapor reservoirs and with said process controller;

f) a precursor control valve which controls vapor flow from said precursor vapor reservoir upon receipt of a signal from said process controller; and

g) a process chamber for vapor deposition of said coating on a substrate present in said process chamber, the process chamber being in direct communication with each of the plurality of precursor vapor reservoirs, the process chamber having a vacuum control valve to control an amount of vacuum applied to the process chamber by a vacuum source;

wherein said process controller is programmed to provide for a single period of vapor flow or intermittent periods of vapor flow, each period of vapor flow defined by a dosage of a controlled aliquot of coating precursor vapor from one of said precursor vapor reservoir into said process chamber without using a carrier gas, and to close the vacuum control valve to isolate the process chamber during each period of vapor flow and during a reaction time period in which at least two coating precursor vapors are maintained in the process chamber;

wherein the process controller is programmed to, during periods of vapor flow of the at least two coating precursor vapors, maintain the closure of the vacuum control valve so that the at least two coating precursor vapors are simultaneously present in the process chamber and so that the total pressure of the process chamber results from equalization of the controlled aliquots that are added to the process chamber during the periods of vapor flow of the at least two coating precursor vapors.

2. An apparatus in accordance with claim 1, h) a plurality of heating devices, one of said heating devices apply heat to one of said precursor containers, to produce said coating precursor vapor within one of said precursor containers.

3. An apparatus in accordance with claim 1, wherein said apparatus for vapor deposition of thin film coatings also comprises i) at least one catalyst delivery system, which catalyst delivery system includes 1) at least one catalyst vapor reservoir in which a catalyst is present in a vaporous form;

and,

     2) at least one in-line device which control precursor vapor flow from said at least one catalyst vapor reservoir into said process chamber.

4. An apparatus in accordance with claim 1, or claim 2, or claim 3, wherein an additional device is present in the form of a remote plasma generator which furnishes plasma species to said process chamber.

5. An apparatus in accordance with claim 1, wherein the process chamber has a pressure of about 0.1 Torr to about 3 Torr during each period of vapor flow.

6. An apparatus in accordance with claim 1, wherein the process chamber has a temperature of about 20 degrees Celsius to about 60 degrees Celsius.

7. An apparatus in accordance with claim 1, wherein the process chamber has a pressure of about 0.1 Torr to about 5 Torr during the reaction time period.

8. An apparatus in accordance with claim 1, wherein the process chamber has a pressure of about 0.1 Torr to about 3 Torr during the reaction time period.

9. An apparatus in accordance with claim 1, wherein the reaction time period is between about 1 minute and about 30 minutes.

10. An apparatus in accordance with claim 1, wherein the closed vacuum control valve isolates the process chamber so that the precursor vapors accumulate in the process chamber to define the pressure during the reaction time period.