Microbolometer devices in CMOS and BiCMOS technologies
First Claim
Patent Images
1. A method of forming a microbolometer unit cell, comprising:
- damaging a portion of a substrate to form a damaged region of the substrate;
forming infrared (IR) absorbing material on the damaged region; and
isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.
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Abstract
A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.
25 Citations
20 Claims
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1. A method of forming a microbolometer unit cell, comprising:
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damaging a portion of a substrate to form a damaged region of the substrate; forming infrared (IR) absorbing material on the damaged region; and isolating the IR absorbing material by forming a cavity underneath the IR absorbing material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method, comprising:
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providing a damage region in a substrate; forming a patterned IR absorbing material on the damaged region; forming vias through the patterned IR absorbing material and into the substrate; forming a cavity in the substrate through the vias, under the IR absorbing material; and electrically connecting a wire to the IR absorbing material. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
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20. A structure comprising:
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a substrate having a damaged region; a microbolometer of a patterned IR absorbing material provided on the damaged region; and a cavity formed in the substrate under the damaged region.
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Specification