Nonvolatile memory device and method for sensing the same
First Claim
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1. A nonvolatile memory device comprising:
- a first resistive memory cell connected to a first word line;
a second resistive memory cell connected to a second word line that is different from the first word line;
a clamping unit connected between a sensing node and the first resistive memory cell and configured to provide a clamping bias to the first resistive memory cell;
a reference current supplying unit connected to the second resistive memory cell and configured to supply a reference current to the second resistive memory cell;
a sense amplifier connected to the sensing node, the sense amplifier being configured to sense a level change of the sensing node; and
a controller configured to perform a sensing operation such that when the first word line is enabled, the second word line is disabled.
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Abstract
A nonvolatile memory device includes a first resistive memory cell connected to a first word line, a second resistive memory cell connected to a second word line that is different from the first word line, a clamping unit connected between a sensing node and a reference current supplying unit connected to the second resistive memory cell to supply a reference current, and a sense amplifier connected to the sensing node to sense a level change of the sensing node, wherein when the first word line is enabled, the second word line is disabled.
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Citations
8 Claims
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1. A nonvolatile memory device comprising:
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a first resistive memory cell connected to a first word line; a second resistive memory cell connected to a second word line that is different from the first word line; a clamping unit connected between a sensing node and the first resistive memory cell and configured to provide a clamping bias to the first resistive memory cell; a reference current supplying unit connected to the second resistive memory cell and configured to supply a reference current to the second resistive memory cell; a sense amplifier connected to the sensing node, the sense amplifier being configured to sense a level change of the sensing node; and a controller configured to perform a sensing operation such that when the first word line is enabled, the second word line is disabled. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification